Search Results1-18 of  18

  • NAGAMURA Naoka ID: 9000258701670

    University of Tokyo (2006 from CiNii)

    Articles in CiNii:1

    • Quasi-one-dimensional quantized states in an epitaxial Ag film on a one-dimensional surface superstructure (2006)
  • NAGAMURA Naoka ID: 9000314379720

    National Institute for Materials Science (2016 from CiNii)

    Articles in CiNii:1

    • <i>Operando</i> Scanning Photoelectron Microscopy Analysis for Electronic Devices (2016)
  • Nagamura Naoka ID: 9000258704153

    Department of Physics, School of Science, University of tokyo (2009 from CiNii)

    Articles in CiNii:1

    • Improvement of the Variable-Temperature Independently-Driven Four-Tip Scanning Tunneling Microscope and Mesurement of the Transport Properties of Surface Structures and Quantum Films Prepared on Si (111) (2009)
  • Nagamura Naoka ID: 9000258704666

    Univ. Tokyo (2011 from CiNii)

    Articles in CiNii:1

    • Temperature dependence of anisotropic surface conductivity of Si(111)-4x1-In (2011)
  • Nagamura Naoka ID: 9000283800204

    School of Science, the University of Tokyo (2005 from CiNii)

    Articles in CiNii:1

    • Fermiology of a Free-Electron-Like Two-Dimensional Metallic Monolayer on a Solid Surface (2005)
  • Nagamura Naoka ID: 9000283800521

    Univ.Tokyo (2005 from CiNii)

    Articles in CiNii:1

    • Quantum well states of ultra thin films on Si(111)8x2-In and Si(111)7x7 (2005)
  • Nagamura Naoka ID: 9000283847260

    School of Engneering, Univ. of Tokyo (2010 from CiNii)

    Articles in CiNii:1

    • Study of transport properties of Ag quantum films on Si(111)4x1-In with the low-temperature independently-driven 4-tip STM (2010)
  • Nagamura Naoka ID: 9000345210303

    National Institute for Materials Science (2016 from CiNii)

    Articles in CiNii:1

    • Study on the current collapse phenomenon in GaN-HEMT using operando microspectroscopy (2016)
  • Nagamura Naoka ID: 9000347100277

    東京大学工学系研究科応用化学専攻|東京大学放射光連携研究機構|CREST-JST (2012 from CiNii)

    Articles in CiNii:1

    • High Spatial Resolution Analysis of Interfacial Electronic States in Graphene Devices Using 3D nano ESCA (2012)
  • Nagamura Naoka ID: 9000347100498

    東大工 (2012 from CiNii)

    Articles in CiNii:1

    • Formation and characterization of epitaxial graphene on microfabricated Si(100) substrates (2012)
  • Nagamura Naoka ID: 9000347154708

    東京大学大学院 工学系研究科 応用化学専攻|東京大学 放射光連携研究機構 (2013 from CiNii)

    Articles in CiNii:1

    • Spatial analysis of the interface state tuning in graphene devices using 3D-nanoESCA (2013)
  • Nagamura Naoka ID: 9000347154730

    Articles in CiNii:1

    • Physical properties of epitaxial graphene on microfabricated Si(100) and Si(111) substrates (2013)
  • Nagamura Naoka ID: 9000347217009

    IMRAM, Tohoku University (2015 from CiNii)

    Articles in CiNii:1

    • Operando spectromicroscopy on access region of graphene transistor (2015)
  • Nagamura Naoka ID: 9000363181055

    NIMS (2017 from CiNii)

    Articles in CiNii:1

    • Quantitative analysis of surface-states-oriented degradation mechanism of 2D electron devices operations by using operando x-ray spectromicroscopy (2017)
  • Nagamura Naoka ID: 9000396131577

    NIMS (2018 from CiNii)

    Articles in CiNii:1

    • Photoelectron Nano-spectroscopy of Reactive Ion Etching-Induced Damages to the Trench Sidewalls and Bottoms of 4H-SiC Trench-MOSFETs (2018)
  • Nagamura Naoka ID: 9000398982363

    NIMS|JST PRESTO (2018 from CiNii)

    Articles in CiNii:1

    • High-throughput spectrum imaging data analysis of synchrotron X-ray photoelectron microscopy using machine learning (2018)
  • Nagamura Naoka ID: 9000398982911

    NIMS|JST PRESTO (2018 from CiNii)

    Articles in CiNii:1

    • NEXAFS characterization of quinone organic cathode materials for lithium ion battery (2018)
  • Nagamura Naoka ID: 9000401988470

    Articles in CiNii:1

    • Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy (2014)
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