Search Results1-9 of  9

  • NAGASHIMA Yasuaki ID: 9000000635687

    Zexel, Inc (1995 from CiNii)

    Articles in CiNii:1

    • Deodorization of Laboratory Animal Facilities by Ozone (1995)
  • NAGASHIMA Yasuaki ID: 9000004904988

    Optical Device Development Department, Anritsu Devices Co., Ltd. (2012 from CiNii)

    Articles in CiNii:5

    • Development of High Power Semiconductor Laser and Optical Device Sensing Applications (2008)
    • Asymmetric-cladding 14xx-nm pump laser with high slope efficiency and fiber output power of>1 W (2003)
    • High Power 1480nm Laser Diode for EDFA Pumping (1998)
  • NAGASHIMA Yasuaki ID: 9000005567967

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (1995 from CiNii)

    Articles in CiNii:1

    • Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching (1995)
  • NAGASHIMA Yasuaki ID: 9000256489069

    ZEXEL Corporation (1991 from CiNii)

    Articles in CiNii:1

    • The Ozone Sterilizing and Deodorizing Apparatus at Brewing Food Factories (1991)
  • Nagashima Yasuaki ID: 9000258128107

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching. (1995)
  • Nagashima Yasuaki ID: 9000283157012

    Articles in CiNii:1

    • Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching. (1994)
  • Nagashima Yasuaki ID: 9000325470297

    Anritsu Corporation (2016 from CiNii)

    Articles in CiNii:1

    • Optical gating width variability using electrode parasitic capacitance (2016)
  • Nagashima Yasuaki ID: 9000401645932

    Articles in CiNii:1

    • Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching (1994)
  • Nagashima Yasuaki ID: 9000401649485

    Articles in CiNii:1

    • Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching (1995)
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