Search Results1-20 of  48

  • 1 / 3
  • Nagashio Kosuke ID: 9000018505640

    Articles in CiNii:1

    • Density-of-states limited contact resistance in graphene field-effect transistors (Selected topics in applied physics: Technology, physics, and modeling of graphene devices) (2011)
  • NAGASHIO Kosuke ID: 9000001111091

    The Institute of Space and Astronautical Science (2003 from CiNii)

    Articles in CiNii:1

    • Containerless Solidification and Net Shaping by Splat Quenching of Undercooled Nd_2Fe_<14>B Melts (2003)
  • NAGASHIO Kosuke ID: 9000001778816

    Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (2007 from CiNii)

    Articles in CiNii:2

    • Spherical Silicon Crystal Formed by Semisolid Process in Drop Tube (2006)
    • Dendrite Break up in Solidification of Undercooled B-doped Si Melts (2007)
  • NAGASHIO Kosuke ID: 9000014185173

    Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (2008 from CiNii)

    Articles in CiNii:1

    • In Situ Observation of a Levitated SiO_2-SiC Pellet Irradiated by a CO_2 Laser (2008)
  • NAGASHIO Kosuke ID: 9000014185276

    Institute of Space and Astronautical Science (ISAS) (2008 from CiNii)

    Articles in CiNii:1

    • Solidification Behavior of Intermetallic Compounds with Strong Crystallographic Anisotropy (2008)
  • NAGASHIO Kosuke ID: 9000016373735

    Department of Materials Engineering, The University of Tokyo (2012 from CiNii)

    Articles in CiNii:8

    • Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient (2008)
    • Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction (2009)
    • Mobility Variations in Mono- and Multi-Layer Graphene Films (2009)
  • NAGASHIO Kosuke ID: 9000107350603

    Department of Materials Engineering, The University of Tokyo (2011 from CiNii)

    Articles in CiNii:1

    • Junctionless Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate (2011)
  • NAGASHIO Kosuke ID: 9000107364219

    Department of Materials Engineering, School of Engineering, The University of Tokyo (2012 from CiNii)

    Articles in CiNii:1

    • Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks (2012)
  • NAGASHIO Kosuke ID: 9000240539761

    Department of Materials Engineering, School of Engineering, The University of Tokyo (2012 from CiNii)

    Articles in CiNii:1

    • Oxidation Rate Reduction of Ge with O_2 Pressure Increase (2012)
  • NAGASHIO Kosuke ID: 9000389547582

    Department of Materials Engineering, The University of Tokyo (2018 from CiNii)

    Articles in CiNii:1

    • Type-II HfS<sub>2</sub>/MoS<sub>2</sub> Heterojunction Transistors (2018)
  • Nagashio Kosuke ID: 1000020373441

    The University of Tokyo (2017 from CiNii)

    Articles in CiNii:53

    • Containerless processing of NdBa_2Cu_3O_<7-x> (1997)
    • Containerless Rapid Solidification of Peritectic Oxides (1999)
    • Direct Crystallization of Y_3Fe_5O_<12> Garnet by Containerless Solidification Processing (2001)
  • Nagashio Kosuke ID: 9000024992596

    Articles in CiNii:1

    • Counter Dipole Layer Formation in Multilayer High-k Gate Stacks (2012)
  • Nagashio Kosuke ID: 9000025117721

    Articles in CiNii:1

    • Systematic investigation of the intrinsic channel properties and contact resistance of monolayer and multilayer graphene field-effect transistor (2010)
  • Nagashio Kosuke ID: 9000080829993

    Articles in CiNii:1

    • Kinetic Effects of O-Vacancy Generated by GeO$_{2}$/Ge Interfacial Reaction (2011)
  • Nagashio Kosuke ID: 9000081803241

    Articles in CiNii:1

    • Interfacial Dipole at High-kDielectric/SiO2Interface: X-ray Photoelectron Spectroscopy Characteristics (2011)
  • Nagashio Kosuke ID: 9000257841476

    The Institute of Space and Astronautical Science (2003 from CiNii)

    Articles in CiNii:1

    • Containerless Solidification and Net Shaping by Splat Quenching of Undercooled Nd<SUB>2</SUB>Fe<SUB>14</SUB>B Melts (2003)
  • Nagashio Kosuke ID: 9000312841292

    School of Eng., Univ. Tokyo (2015 from CiNii)

    Articles in CiNii:1

    • 21pPSB-54 Analysis of capacitance of bilayer graphene device by theoretical calculation (2015)
  • Nagashio Kosuke ID: 9000347100287

    東京大学工学系研究科マテリアル工学専攻 (2012 from CiNii)

    Articles in CiNii:1

    • High Spatial Resolution Analysis of Interfacial Electronic States in Graphene Devices Using 3D nano ESCA (2012)
  • Nagashio Kosuke ID: 9000347216188

    School of Engineering, The University of Tokyo (2015 from CiNii)

    Articles in CiNii:1

    • Analysis of capacitance in bilayer graphene device by first-principles calculation (2015)
  • Nagashio Kosuke ID: 9000392811689

    The Institute of Space and Astronautical Science (2002 from CiNii)

    Articles in CiNii:1

    • Oxygen Partial Pressure Dependence of Direct Growth of Y123 and Nd123 by Containerless Processing (2002)
  • 1 / 3
Page Top