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  • NAKAAKI Isamu ID: 9000016486784

    Articles in CiNii:27

    • Properties of a-SiC:N:H Films Prepared by Magnetron Sputtering using Ammonia and Methane (1995)
    • Electrical and Optical Properties of GeSe_2:H Films Prepared by r. f. Plasma-Assisted Deposition (1995)
    • Amorphous Ge-C Thin Films Prepared by rf Sputtering (1995)
  • NAKAAKI Isamu ID: 9000020057670

    Shizuoka Prefectural Industrial Technology Center (1990 from CiNii)

    Articles in CiNii:1

    • Annealing effects of conductivity for a-Si1-xCx:H films prepared by R.F. glow discharge decomposition. (1990)
  • NAKAAKI Isamu ID: 9000020059272

    Shizuoka Prefectural Industrial Technology Center (1989 from CiNii)

    Articles in CiNii:1

    • Subustrate temperature dependence of a-SiC:H films prepared by R.F. glow discharge decomposition. (1989)
  • NAKAAKI Isamu ID: 9000020237760

    shizuoka Prefectural Industrial Technology Center (1986 from CiNii)

    Articles in CiNii:1

    • Optical and electrical properties of amorphous SiC:H prepared by magnetron sputtering. (1986)
  • NAKAAKI Isamu ID: 9000020321522

    Fuji Industrial Research Institute of Shizuoka Prefecture (2000 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (2000)
  • NAKAAKI Isamu ID: 9000021459230

    Shizuoka Prefectural Industrial Technology Center (1991 from CiNii)

    Articles in CiNii:1

    • Influence of SiH4/CH4 gas flow rate ratio on the properties of a-SiC:H films showing a negative temperature coeffcient in D.C. conductivity. (1991)
  • NAKAAKI Isamu ID: 9000021466152

    Shizuoka Prefecteral Industrial Research Institute (1995 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (1995)
  • NAKAAKI Isamu ID: 9000021530786

    Shizuoka Prefectural Fuji Industrial Institute (1999 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (1999)
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