Search Results1-20 of  24

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  • NAKAHATA Takumi ID: 9000004781266

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2000 from CiNii)

    Articles in CiNii:4

    • Excellent Si epitaxial layer formation for deep sub-micron MOSFETs with elevated source/drain structures by UHV-CVD (1998)
    • Sub-0.1μm CMOS Technology : Elevated Source/Drain MOSFETs (2000)
    • Sub-0.1μm CMOS Technology : Elevated Source/Drain MOSFETs (2000)
  • NAKAHATA Takumi ID: 9000005600316

    Advanced Technology R&D Center. Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:7

    • Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current (2000)
    • Si Deposition intoFfine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition (1999)
    • Significant Effects of As Ion Implantation on Si-selectibe Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition (1999)
  • NAKAHATA Takumi ID: 9000107305906

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices (2003)
  • NAKAHATA Takumi ID: 9000107334235

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations (2001)
  • NAKAHATA Takumi ID: 9000241147481

    Oita University (2015 from CiNii)

    Articles in CiNii:22

    • An Experimental Study on Splitting Failure on Multiple Bolted Connections Loaded Perpendicular to the Grain(Part 1)Study on Validity of Toughness Coefficient Showed in Standard for Structural Design of Timber Structures (2013)
    • Effect of Moisture Contents on Strength Properties of Shear and Pull out for Nail Joint (2013)
    • Study on Surviving Strength Properties of Japanese Softwood with Biodeterioration(Part 4)Embedding Performance of Nail (2013)
  • NAKAHATA Takumi ID: 9000243887509

    Faculty of Eng., Oita Univ. (2014 from CiNii)

    Articles in CiNii:1

    • Estimation of Shear Strength of Nail Driven into Decayed Wood of Japanese Cedar Sugi (2014)
  • NAKAHATA Takumi ID: 9000283568700

    Oita Univ. (2013 from CiNii)

    Articles in CiNii:1

    • AN EXPERIMENTAL STUDY ON FRACTURE CHARACTERISTIC ON GRID-BOLTED CONNECTIONS LOADED PERPENDICULAR TO THE GRAIN (2013)
  • Nakahata Takumi ID: 9000252967706

    Research Laboratory of Engineering Materials, Tokyo Institute of Technology (1988 from CiNii)

    Articles in CiNii:1

    • X-Ray Diffraction Profiles for Near 180° Scattering from Mosaic Crystals (1988)
  • Nakahata Takumi ID: 9000252971152

    Research Laboratory of Engineering Materials, Tokyo Institute of Technology (1989 from CiNii)

    Articles in CiNii:1

    • X-Ray Diffraction Curves from Mosaic Crystals at Near-Normal Incidence Angles (1989)
  • Nakahata Takumi ID: 9000258147918

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661–8661, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition. (1999)
  • Nakahata Takumi ID: 9000258150136

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664-8641, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies. (2000)
  • Nakahata Takumi ID: 9000258166273

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices (2003)
  • Nakahata Takumi ID: 9000392698404

    Articles in CiNii:1

    • X-Ray Diffraction Profiles for Near 180° Scattering from Mosaic Crystals (1988)
  • Nakahata Takumi ID: 9000392726423

    Articles in CiNii:1

    • X-Ray Diffraction Curves from Mosaic Crystals at Near-Normal Incidence Angles (1989)
  • Nakahata Takumi ID: 9000401608845

    Articles in CiNii:1

    • X-Ray Diffraction Profiles for Near 180° Scattering from Mosaic Crystals (1988)
  • Nakahata Takumi ID: 9000401613692

    Articles in CiNii:1

    • X-Ray Diffraction Curves from Mosaic Crystals at Near-Normal Incidence Angles (1989)
  • Nakahata Takumi ID: 9000401681602

    Articles in CiNii:1

    • Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition (1999)
  • Nakahata Takumi ID: 9000401682580

    Articles in CiNii:1

    • Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition (1999)
  • Nakahata Takumi ID: 9000401690069

    Articles in CiNii:1

    • Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies (2000)
  • Nakahata Takumi ID: 9000401692267

    Articles in CiNii:1

    • Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si2H6and Cl2 (2000)
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