Search Results1-17 of  17

  • Nakakubo Yoshinori ID: 9000018552393

    Articles in CiNii:1

    • Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar metal-oxide-semiconductor field-effect transistors and the optimization methodology (Special issue: Dry process) (2011)
  • Nakakubo Yoshinori ID: 9000024938609

    Articles in CiNii:1

    • Optical and electrical characterization of hydrogen-plasma-damaged silicon surface structures and its impact on in-line monitoring (Special issue: Dry process) (2010)
  • Nakakubo Yoshinori ID: 9000024939701

    Articles in CiNii:1

    • Threshold voltage instability induced by plasma process damage in advanced metal-oxide-semiconductor field-effect transistors (Special issue: Dry process) (2010)
  • Nakakubo Yoshinori ID: 9000025015480

    Articles in CiNii:1

    • Advanced contactless analysis of plasma-induced damage on Si by temperature-controlled photoreflectance spectroscopy (Special issue: Dry process) (2011)
  • Nakakubo Yoshinori ID: 9000025017254

    Articles in CiNii:1

    • Comprehensive modeling of threshold voltage variability induced by plasma damage in advanced metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2010)
  • NAKAKUBO Yoshinori ID: 9000018805475

    Kyoto University (2013 from CiNii)

    Articles in CiNii:6

    • Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching (2011)
    • Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching (2011)
    • Classical Molecular Dynamics Simulations of Plasma-induced Physical Damage : Defect Generation Mechanism in "Fin"-structure MOSFET (2013)
  • Nakakubo Yoshinori ID: 9000025117554

    Articles in CiNii:1

    • Model for bias frequency effects on plasma-damaged layer formation in Si substrates (2010)
  • Nakakubo Yoshinori ID: 9000282391696

    Articles in CiNii:1

    • Structural and electrical characterization of HBr/O2 plasma damage to Si substrate (2011)
  • Nakakubo Yoshinori ID: 9000323844017

    Articles in CiNii:1

    • Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate (2015)
  • Nakakubo Yoshinori ID: 9000401786359

    Articles in CiNii:1

    • 2010-04-20 (2010)
  • Nakakubo Yoshinori ID: 9000401790677

    Articles in CiNii:1

    • 2010-08-20 (2010)
  • Nakakubo Yoshinori ID: 9000401790688

    Articles in CiNii:1

    • Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring (2010)
  • Nakakubo Yoshinori ID: 9000401800092

    Articles in CiNii:1

    • Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy (2011)
  • Nakakubo Yoshinori ID: 9000401800097

    Articles in CiNii:1

    • 2011-08-22 (2011)
  • Nakakubo Yoshinori ID: 9000402000959

    Articles in CiNii:1

    • Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy (2011)
  • Nakakubo Yoshinori ID: 9000402000964

    Articles in CiNii:1

    • 2011-08-01 (2011)
  • Nakakubo Yoshinori ID: 9000402021124

    Articles in CiNii:1

    • Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate (2014)
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