Search Results1-20 of  163

  • NAKASHIMA Hisao ID: 9000001505818

    The Institute of Scientific and Industrial Research, Osaka University (2001 from CiNii)

    Articles in CiNii:2

    • Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution (2001)
    • Scanning Tunneling Microscopy Study of Submicron-Sized pn Junction on Si(001) Surfaces (1997)
  • NAKASHIMA Hisao ID: 9000001721196

    Institute of Scientific and Industrial Research, Osaka University (1996 from CiNii)

    Articles in CiNii:1

    • Stacked Multi-Quantum-Wires Grown on Vicinal GaAs(110) Surfaces by MBE (1996)
  • NAKASHIMA Hisao ID: 9000004344453

    NTT Software Corp. (2002 from CiNii)

    Articles in CiNii:2

    • Current State of Enterprise Application Integrations - EAI Business: Growing under Recession - (2002)
    • Current State of Enterprise Application Integrations - EAI Business: Growing under Recession - (2002)
  • NAKASHIMA Hisao ID: 9000004929168

    Articles in CiNii:49

    • Real-time digital coherent detection (2009)
    • Digital coherent receiver technology for 100-Gbps optical transport systems (2009)
    • 100Gbit/s光伝送システム用デジタルコヒーレント技術 (特集 我が国基礎・基盤研究の現状--富士通研究所) (2009)
  • NAKASHIMA Hisao ID: 9000004959599

    Yokohama National University, Graduate School of Engineering, Dept. of Electrical and Computer Engineering : (present address) Fujitsu Co. Ltd. (2001 from CiNii)

    Articles in CiNii:2

    • Precise formation of fine pits on birefringent film for multi-level optical data storage (2001)
    • Precise formation of fine pits on birefringent film for multi-level optical data storage (2001)
  • NAKASHIMA Hisao ID: 9000005523605

    Central Research Laboratory, Hitachi Ltd. (1970 from CiNii)

    Articles in CiNii:1

    • Photoluminescence Study of the Interface between GaAs Epitaxial Layer and its Substrate (1970)
  • NAKASHIMA Hisao ID: 9000005526022

    Central Research Laboratory, Hitachi Ltd. (1976 from CiNii)

    Articles in CiNii:4

    • A Simple Method for Obtaining Luminescent Pattern of Double Heterostructure Crystals (1973)
    • Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure Crystals (1974)
    • Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mW (1974)
  • NAKASHIMA Hisao ID: 9000005533339

    Central Research Laboratory, Hitachi Ltd. (1980 from CiNii)

    Articles in CiNii:1

    • Transverse Mode Control and Reduction of Threshold Current in (GaAl)As Buried-Heterostructure Lasers with a Buried Optical Guide (1980)
  • NAKASHIMA Hisao ID: 9000005536213

    Department of Electronic Engineering, Faculty of Engineering, University of Tokyo (1966 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure (1966)
  • NAKASHIMA Hisao ID: 9000005655618

    The Institute of Scientific and Industrial Research, Osaka University (2002 from CiNii)

    Articles in CiNii:4

    • Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence (1995)
    • Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal(110) GaAs Surfaces (1995)
    • Growth Temperature Dependence of InAs Islands Grown on GaAs (001) Substrates (2002)
  • NAKASHIMA Hisao ID: 9000005735024

    The Institute of Scientific and Industrial Research, Osaka University (1995 from CiNii)

    Articles in CiNii:1

    • Al Growth on Si (111) (√<3>×√<3>) -Ga Surfaces at Room Temperature (1995)
  • NAKASHIMA Hisao ID: 9000005752090

    Central Research Laboratory, Hitachi Ltd. (1979 from CiNii)

    Articles in CiNii:1

    • Photoluminescence Observation of Defects in Silicon : B-3: CRYSTAL GROWTH AND DEFECTS (1979)
  • NAKASHIMA Hisao ID: 9000020104533

    The Institute of Scientific and Industrial Research, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (2001)
  • NAKASHIMA Hisao ID: 9000252845044

    Institute of Scientific and Industrial Research, Osaka University (1988 from CiNii)

    Articles in CiNii:1

    • GaAs/AIGaAs Molecular Beam Epitaxial Growth and Substrate Orientation (1988)
  • NAKASHIMA Hisao ID: 9000253319735

    日立製作所中央究所 (1972 from CiNii)

    Articles in CiNii:1

    • Mesa-Stripe Geometry GaAs-Ga<sub>1-<i>x</i></sub>Al<sub><i>x</i></sub>As Double-Heterojunction Laser (1972)
  • NAKASHIMA Hisao ID: 9000253321358

    Central Research Laboratory, Hitachi, Ltd., (1978 from CiNii)

    Articles in CiNii:1

    • Comments on “Characterization of Silicon Crystals by Photoluminescence Method” (1978)
  • NAKASHIMA Hisao ID: 9000253322173

    (株)日立製作所中央研究所 (1981 from CiNii)

    Articles in CiNii:1

    • Evaluation of Si Crystals by Using Electron-Hole Droplets (1981)
  • NAKASHIMA Hisao ID: 9000253323146

    Optoelectronics Joint Research Laboratory. (1984 from CiNii)

    Articles in CiNii:1

    • Formation and Thermal Stability of Au-GaAs (001) Interfaces (1984)
  • NAKASHIMA Hisao ID: 9000253323230

    Optoelectronics Joint Research Laboratory. (1985 from CiNii)

    Articles in CiNii:1

    • Enhanced Disordering of Compound Semiconductor Superlattices and Its Application to Fabrication of Devices (1985)
  • NAKASHIMA Hisao ID: 9000253324100

    Optoelctronics Joint Research Laboratory.|Institute of Scientific and Industrial Research, Osaka University (1988 from CiNii)

    Articles in CiNii:1

    • LaB<sub>6</sub>/GaAs Interface and Its Application to FET (1988)
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