Search Results1-9 of  9

  • NAKATA Rempei ID: 9000001506481

    TOSHIBA CORPORATION SEMICONDUCTOR COMPANY (2001 from CiNii)

    Articles in CiNii:1

    • High-Performance Low-k Dielectric Using Advanced EB-Cure Process (2001)
  • NAKATA Rempei ID: 9000004970247

    Toshiba Corporation (2005 from CiNii)

    Articles in CiNii:5

    • Low pressure chemical uapor deposition of tungsten (1992)
    • Research of Oxide CMP Characteristics (1996)
    • Challenge of low-k materials for 130, 90, 56nm node interconnect technology and beyond (2005)
  • NAKATA Rempei ID: 9000107341721

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:1

    • Properties of High-Performance Porous SiOC Low-k Film Fabricated Using Electron-Beam Curing (2005)
  • NAKATA Rempei ID: 9000107348170

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2004 from CiNii)

    Articles in CiNii:1

    • High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system (2004)
  • NAKATA Rempei ID: 9000107352761

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:1

    • Structural Studies of High-Performance Low-k Dielectric Materials Improved by Electron-Beam Curing (2005)
  • Nakata Rempei ID: 9000258177729

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:1

    • Structural Studies of High-Performance Low-k Dielectric Materials Improved by Electron-Beam Curing (2005)
  • Nakata Rempei ID: 9000258182747

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:1

    • Properties of High-Performance Porous SiOC Low-k Film Fabricated Using Electron-Beam Curing (2005)
  • Nakata Rempei ID: 9000401737613

    Articles in CiNii:1

    • Properties of High-Performance Porous SiOC Low-kFilm Fabricated Using Electron-Beam Curing (2005)
  • Nakata Rempei ID: 9000401741470

    Articles in CiNii:1

    • Structural Studies of High-Performance Low-kDielectric Materials Improved by Electron-Beam Curing (2005)
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