Search Results1-15 of  15

  • Nanjo Takuma ID: 9000018453444

    Articles in CiNii:1

    • Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts (2011)
  • Nanjo Takuma ID: 9000025121117

    Articles in CiNii:1

    • X-ray photoelectron spectroscopy study of the origin of the improved device performance by a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high-electron-mobility transistor (2007)
  • NANJO Takuma ID: 9000002175345

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2009 from CiNii)

    Articles in CiNii:2

    • First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation (2007)
    • Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping (2009)
  • NANJO Takuma ID: 9000004745009

    Mitsubishi electric corp. Advanced technology R&D center (2015 from CiNii)

    Articles in CiNii:20

    • Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN (2003)
    • Zn Ion Implantation along the c Axis for Formation of Highly Resistive GaN Layers (2004)
    • Breakdown Voltage Enhancement in AlGaN Channel HEMTs (2008)
  • NANJO Takuma ID: 9000107360828

    Advanced Technology Research and Development Center, Mitsubishi Electric Corporation (2008 from CiNii)

    Articles in CiNii:1

    • First Operation of AlGaN Channel High Electron Mobility Transistors (2008)
  • NANJO Takuma ID: 9000107389473

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate (2004)
  • Nanjo Takuma ID: 9000401563830

    Articles in CiNii:1

    • First Operation of AlGaN Channel High Electron Mobility Transistors (2007)
  • Nanjo Takuma ID: 9000401565959

    Articles in CiNii:1

    • Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping (2009)
  • Nanjo Takuma ID: 9000401765907

    Articles in CiNii:1

    • X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor (2007)
  • Nanjo Takuma ID: 9000401797699

    Articles in CiNii:1

    • Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts (2011)
  • Nanjo Takuma ID: 9000401977787

    Articles in CiNii:1

    • Investigation of post-annealing effects for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors with thin AlN barrier layer (2019)
  • Nanjo Takuma ID: 9000401980874

    Articles in CiNii:1

    • Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV (2017)
  • Nanjo Takuma ID: 9000401998568

    Articles in CiNii:1

    • Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts (2011)
  • Nanjo Takuma ID: 9000402036458

    Articles in CiNii:1

    • Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors (2016)
  • Nanjo Takuma ID: 9000402047276

    Articles in CiNii:1

    • Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process (2018)
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