Search Results1-20 of  46

  • 1 / 3
  • NISHITANI MIKIHIKO ID: 9000253161239

    Central Research Laboratories, Matsushita Electric Ind, Co. Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • CHARACTERIZATION OF CuInSe<sub>2</sub> THIN FILMS (1991)
  • NISHITANI Mikihiko ID: 9000002165151

    Display Device Development Center, Matsushita Electrics Industrial Co. Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO_2 Interfaces (1999)
  • NISHITANI Mikihiko ID: 9000005547641

    Matsushita Electric Industrial Co. (2001 from CiNii)

    Articles in CiNii:10

    • Surface Characterization of Chemically Treated Cu(In, Ga)Se_2 Thin Films (1996)
    • Wall Heating Effect on Crystallization of Low-Temperature Deposited Silicon Films from an Inductuvely-Coupled Plasma (2001)
    • LOW-TEMPERATURE FORMATION OF poly-Si FILMS BY INDUCTIVELY-COUPLED SILANE PLASMA (1997)
  • NISHITANI Mikihiko ID: 9000017174046

    Osaka Univ. (2009 from CiNii)

    Articles in CiNii:2

    • Characterization of Protective Layer Materials for Plasma Display Panel (2009)
    • パナソニック(ディスプレイ)材料共同研究講座 (2009)
  • NISHITANI Mikihiko ID: 9000107341831

    Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC) (2005 from CiNii)

    Articles in CiNii:1

    • Deposition of Pure Hydrogenated Amorphous Silicon by Plasma-Enhanced Chemical Vapor Deposition for Polycrystalline Silicon Thin Film Transistors (2005)
  • NISHITANI Mikihiko ID: 9000107353788

    Matsushita Electric Industrial Co., Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • Energy Distribution of Ion-Induced Secondary Electrons from MgO Surface (2004)
  • NISHITANI Mikihiko ID: 9000248234155

    Image Devices Development Center, Panasonic Corp. (2012 from CiNii)

    Articles in CiNii:1

    • Effect of Impurity in Discharge Gas on High γ Properties of Newly Developed CeSrO Film for Novel Plasma Display Panel (2012)
  • NISHITANI Mikihiko ID: 9000283847693

    Panasonic Corp (2010 from CiNii)

    Articles in CiNii:1

    • Changes in ion-induced secondary electron yield and surface state of MgO film by heating (2010)
  • Nishitani Mikihiko ID: 9000003391117

    Dislay Device Dvlp.Ctr., Matsushita Elect.Indust.Corp.Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • 27aW-4 Decrease in the interface state density by the cyanide treatment and its application to photocoltaic devices (1999)
  • Nishitani Mikihiko ID: 9000023815643

    Articles in CiNii:1

    • X-Ray Photoelectron-Spectroscopy of Cuinse2 (1992)
  • Nishitani Mikihiko ID: 9000023815673

    Articles in CiNii:1

    • X-Ray-Fluorescence Spectroscopy of Cu-In-Se Chalcopyrite-Structure Thin-Films (1992)
  • Nishitani Mikihiko ID: 9000057271881

    Articles in CiNii:1

    • Effects of Wall Charge on Firing Voltage and Statistical Delay Time in Alternating-Current Plasma Display Panels (2010)
  • Nishitani Mikihiko ID: 9000064767586

    Articles in CiNii:1

    • Accumulation and Decay Characteristics of Exoelectron Sources at MgO Protective Layer Surface in Alternating-Current Plasma Display Panels (2010)
  • Nishitani Mikihiko ID: 9000083332735

    Articles in CiNii:1

    • Improvement in Discharge Delay Time by Accumulating Positive Wall Charges on Cathode MgO Protective Layer Surface in Alternating-Current Plasma Display Panels (2011)
  • Nishitani Mikihiko ID: 9000252765070

    Central Research Laboratories, Matsushita Electric Ind. Co. Ltd. (1992 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterization of CuInSe<SUB>2</SUB> Thin Films by Molecular-Beam Deposition Method (1992)
  • Nishitani Mikihiko ID: 9000252975142

    Central Research Laboratories, Matsushita Electric Industrial Co., Ltd. (1990 from CiNii)

    Articles in CiNii:1

    • Coevaporation Effect of Te on P-Type CdTe:Cu Film Formation (1990)
  • Nishitani Mikihiko ID: 9000258120109

    Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka 570 (1994 from CiNii)

    Articles in CiNii:1

    • Preparation of Conductive and Transparent Thin Films by Argon Ion Beam Sputtering of Zinc Oxide in Atmosphere Containing Hydrogen. (1994)
  • Nishitani Mikihiko ID: 9000258124032

    Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 612–02 (1994 from CiNii)

    Articles in CiNii:1

    • Preparation of Ordered Vacancy Chalcopyrite-Type CuIn3Se5 Thin Films. (1994)
  • Nishitani Mikihiko ID: 9000258129311

    Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Preparation of Device-Quality Cu(In, Ga)Se2 Thin Films Deposited by Coevaporation with Composition Monitor. (1995)
  • Nishitani Mikihiko ID: 9000258133068

    Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Surface Characterization of Chemically Treated Cu(In,Ga)Se2 Thin Films. (1996)
  • 1 / 3
Page Top