Search Results1-20 of  112

  • NISHIYAMA Nobuhiko ID: 9000399576813

    Articles in CiNii:1

    • Continuous wave operation up to 90℃ of npn-AlGaInAs/InP transistor laser (光エレクトロニクス) (2018)
  • NISHIYAMA Nobuhiko ID: 9000399578287

    Articles in CiNii:1

    • Continuous wave operation up to 90℃ of npn-AlGaInAs/InP transistor laser (レーザ・量子エレクトロニクス) (2018)
  • NISHIYAMA Nobuhiko ID: 9000001814024

    Corning Incorporated (2006 from CiNii)

    Articles in CiNii:1

    • All-Optical Regeneration Using Transverse Mode Switching in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers (2006)
  • NISHIYAMA Nobuhiko ID: 9000004754569

    Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology (2015 from CiNii)

    Articles in CiNii:121

    • Report on CLEO/QELS'99 (1999)
    • AlAs selective oxidation Process (2000)
    • Near-field Analysis of Micro-Aperture Surface Emitting Laser (1999)
  • NISHIYAMA Nobuhiko ID: 9000004823960

    Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology (2002 from CiNii)

    Articles in CiNii:17

    • Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B (2001)
    • Heavily p-Type Doped AlAs Growth on GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors (1997)
    • GalnAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311)B (2001)
  • NISHIYAMA Nobuhiko ID: 9000006305312

    Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Department of Electrical and Electronic Engineering, Tokyo Institute of Technology (2006 from CiNii)

    Articles in CiNii:1

    • Low Threshold Current DR Laser with Wirelike Active Regions and Integration of EAM with High Electrical Isolation (2006)
  • NISHIYAMA Nobuhiko ID: 9000019142350

    Tokyo Institute of Technology (2012 from CiNii)

    Articles in CiNii:1

    • Athermal Wavelength Filters toward Optical Interconnection to LSIs (2012)
  • NISHIYAMA Nobuhiko ID: 9000107338486

    Corning Incorporated (2004 from CiNii)

    Articles in CiNii:1

    • Light-Induced Transverse-Mode Switching of a Vertical-Cavity Surface-Emitting Laser For Optical Signal Processing (2004)
  • NISHIYAMA Nobuhiko ID: 9000107353780

    Corning Incorporated (2004 from CiNii)

    Articles in CiNii:1

    • Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure (2004)
  • NISHIYAMA Nobuhiko ID: 9000107354867

    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology (2011 from CiNii)

    Articles in CiNii:1

    • Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells (2011)
  • NISHIYAMA Nobuhiko ID: 9000107364646

    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology (2008 from CiNii)

    Articles in CiNii:1

    • Electrically pumped GaInAsP/InP DFB Laser on SOI Substrate by Direct Wafer Bonding (2008)
  • NISHIYAMA Nobuhiko ID: 9000107365986

    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology (2008 from CiNii)

    Articles in CiNii:1

    • Electrically pumped GaInAsP/InP DFB Laser on SOI Substrate by Direct Wafer Bonding (2008)
  • NISHIYAMA Nobuhiko ID: 9000107378968

    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology (2011 from CiNii)

    Articles in CiNii:1

    • Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions (2011)
  • NISHIYAMA Nobuhiko ID: 9000253327367

    Precision and Intelligence Laboratory, Tokyo Institute of Technology (2000 from CiNii)

    Articles in CiNii:1

    • Alas selective oxidation process (2000)
  • NISHIYAMA Nobuhiko ID: 9000396112967

    Tokyo Institute of Technology (2018 from CiNii)

    Articles in CiNii:1

    • Si-Photonics-Based Layer-to-Layer Coupler Toward 3D Optical Interconnection (2018)
  • Nishiyama Nobuhiko ID: 9000020667716

    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology (2012 from CiNii)

    Articles in CiNii:1

    • Theoretical analysis of the damping effect on a transistor laser (2012)
  • Nishiyama Nobuhiko ID: 9000021308991

    Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology (2008 from CiNii)

    Articles in CiNii:1

    • High speed response of nonlinear optical phase-shifter based on vertical micro-cavity saturable absorber (2008)
  • Nishiyama Nobuhiko ID: 9000023595643

    Articles in CiNii:1

    • Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits (2009)
  • Nishiyama Nobuhiko ID: 9000025117187

    Articles in CiNii:1

    • Athermal wavelength characteristics of Si slot ring resonator embedded with benzocyclobutene for optoelectronic integrated circuits (2010)
  • Nishiyama Nobuhiko ID: 9000047514671

    Articles in CiNii:1

    • GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect (2008)
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