Search Results1-20 of  23

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  • Nishizawa Shin-ichi ID: 9000025020276

    Articles in CiNii:1

    • Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts (2011)
  • NISHIZAWA Shin-ichi ID: 9000000167961

    Present address : Electrotechnical Loboratory (1997 from CiNii)

    Articles in CiNii:4

    • Measurement of Temperature Fluctuations in Marangoni Convection in a Half-zone Silicon Melt on Board the TR-IA-4 Rocket (1997)
    • Experimental Results of Oscillatory Marangoni Convection in a Liquid Bridge under Normal Gravity (1997)
    • INTERFACIAL CONTAMINATION CAUSED BY WATER ON MARANGONI CONVECTION IN A SILICONE OIL LIQUID BRIDGE (1993)
  • NISHIZAWA Shin-ichi ID: 9000000555980

    Department of Chemical Engineering, Waseda University (1993 from CiNii)

    Articles in CiNii:1

    • MOMENTUM, WITH HEAT AND MASS TRANSFER THROUGH GAS-LIQUID INTERFACE WITH ACCELERATED INTERFACIAL VELOCITY (1993)
  • NISHIZAWA Shin-ichi ID: 9000001421059

    National Institute of Advanced Industrial Science and Technology (AIST) (2005 from CiNii)

    Articles in CiNii:1

    • SiC Bulk Single Crystal Growth by Modified-Lely Method (2005)
  • NISHIZAWA Shin-ichi ID: 9000018263506

    Electrotechnical Laboratory (1998 from CiNii)

    Articles in CiNii:1

    • Stability of Ba(B_<0.9>Al_<0.1>)O_4 molten zone under 1g condition (1998)
  • NISHIZAWA Shin-ichi ID: 9000018265601

    Articles in CiNii:2

    • Numerical Simulation of Thermal Transpiration of Capacitance Diaphragm Gauge (2002)
    • Numerical Simulation of Thermal Transpiration in Capacitance Diaphragm Gauge (2003)
  • NISHIZAWA Shin-ichi ID: 9000020105140

    Electrotechnical Laboratory (2001 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (2001)
  • NISHIZAWA Shin-ichi ID: 9000254663330

    National Institute of Advanced Industrial Science and Technology (2001 from CiNii)

    Articles in CiNii:1

    • In-situ X-ray Topography on Crystal Growth of Silicon Carbide. (2001)
  • NISHIZAWA Shin-ichi ID: 9000265571246

    Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (2013 from CiNii)

    Articles in CiNii:1

    • Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface (2013)
  • NISHIZAWA Shin-ichi ID: 9000392155593

    National Institute of Advanced Industrial Science and Technology (2016 from CiNii)

    Articles in CiNii:1

    • Wide Band Gap Materials and Its Power Devices (2016)
  • NISHIZAWA Shin-ichi ID: 9000003772635

    National Institute of Advanced Industrial Science and Technology (2012 from CiNii)

    Articles in CiNii:13

    • Thermocapillary and Solutalcapillary Convection in Two Dimensional Open Cavity (1996)
    • 3rd China-Japan Workshop on Microgravity Science (1997)
    • Numerical Analysis of Thermal Transpiration Effect of a Diaphragm Gauge (2001)
  • NISHIZAWA Shin-ichi ID: 9000004890430

    PERC (2003 from CiNii)

    Articles in CiNii:1

    • SiC Bulk Single Crystal Growth by Sublimation Method : Use of Numerical Simulation (2003)
  • Nishizawa Shin-ichi ID: 9000004339123

    National Institute of Advanced Industrial Science and Technology (2006 from CiNii)

    Articles in CiNii:6

    • In-situ X-ray topography and simulation for silicon carbide single crystal growth (2006)
    • X線トポグラフィーによるSiC単結晶成長その場観察装置の開発 (1999)
    • SiC単結晶成長のX線トポグラフィーその場観察装置の開発 (1999)
  • Nishizawa Shin-ichi ID: 9000239195276

    Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (2013 from CiNii)

    Articles in CiNii:1

    • SiC Bulk Single Crystal Growth(<Special Issue>)Opening Up a New World of Crystal Growth on SiC) (2013)
  • Nishizawa Shin-ichi ID: 9000256658349

    Department of Chemical Engineering, Depertment of Science and Engineering, Waseda University (1994 from CiNii)

    Articles in CiNii:1

    • Marangoni Convective Phenomena under Microgravity Condition. (1994)
  • Nishizawa Shin-ichi ID: 9000401761454

    Articles in CiNii:1

    • 2007-08-06 (2007)
  • Nishizawa Shin-ichi ID: 9000401795059

    Articles in CiNii:1

    • Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts (2011)
  • Nishizawa Shin-ichi ID: 9000401977992

    Articles in CiNii:1

    • Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes (2019)
  • Nishizawa Shin-ichi ID: 9000401995934

    Articles in CiNii:1

    • Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts (2011)
  • Nishizawa Shin-ichi ID: 9000402395020

    Articles in CiNii:1

    • Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates (2019)
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