Search Results1-9 of  9

  • NOZAWA Ryoichi ID: 9000001927608

    Nagoya University (1998 from CiNii)

    Articles in CiNii:2

    • In situ PM-IR-RAS observation of ECR hydrogen plasma anneal process (1997)
    • Evaluation of growing surface in low-temperature polycrystalline silicon films (1998)
  • NOZAWA Ryoichi ID: 9000004754945

    OLED Technological Development Department, Seiko Epson Corporation (2002 from CiNii)

    Articles in CiNii:4

    • Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors (2002)
    • Low-Temp. Poly-Si TFT driven Light-Emitting Polymer Display (2000)
    • Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors (2001)
  • NOZAWA Ryoichi ID: 9000005185805

    School of Pharmaceutical Sciences, Toho University (1990 from CiNii)

    Articles in CiNii:1

    • Synthetic Studies on Indoles and Related Compounds. XXV. The Friedel-Crafts Acylation of Ethyl 1H-Indole-2-carboxylate. (2) (1990)
  • NOZAWA Ryoichi ID: 9000107350364

    Base Technology Research Center, Seiko Epson Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors (2001)
  • NOZAWA Ryoichi ID: 9000254701781

    Articles in CiNii:1

    • Synthetic studies on indoles and related compounds. XXV. The Friedel-Crafts acylation of ethyl 1H-indole-2-carboxylate. (2). (1990)
  • Nozawa Ryoichi ID: 9000258154126

    Base Technology Research Center, Seiko Epson Corporation, 281 Fujimi, Nagano 399-0293, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary in Polycrystalline Silicon Thin-Film Transistors. (2001)
  • Nozawa Ryoichi ID: 9000401696208

    Articles in CiNii:1

    • Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary in Polycrystalline Silicon Thin-Film Transistors (2001)
  • Nozawa Ryoichi ID: 9000401700354

    Articles in CiNii:1

    • Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors (2001)
  • Nozawa Ryoichi ID: 9000401703295

    Articles in CiNii:1

    • Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors (2001)
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