Search Results101-120 of  170

  • Nabatame T ID: 9000024883908

    Articles in CiNii:1

    • Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures (2003)
  • Nabatame Takeo ID: 9000005074505

    株式会社東芝那須工場 (1996 from CiNii)

    Articles in CiNii:1

    • CTport, Helical CT for radiotheraphy : Development of DRR-plan (1996)
  • Nabatame Tomomi ID: 9000403868372

    Articles in CiNii:1

    • Discourse Structure of Request Conversation among Friends : Cases of Japanese, Chinese and Korean (2012)
  • Nabatame Tomomi ID: 9000403904963

    Articles in CiNii:1

    • The Use of the Japanese Interjectional Particle NE to Influence the Hearer's Communicative Attitude (2006)
  • Nabatame Toshihide ID: 9000242840448

    MIRAI-ASET (2002 from CiNii)

    Articles in CiNii:1

    • First principles calculations of Oxygen diffusion in HfO2 (2002)
  • Nabatame Toshihide ID: 9000252764621

    Hitachi Research Laboratory, Hitachi Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Properties of Tl<SUB>2</SUB>Ba<SUB>2</SUB>Ca<SUB>1</SUB>Cu<SUB>2</SUB>O<I><SUB>x</SUB></I> Thin Films Prepared on Polycrystalline Yttria-Stabilized Zirconia Substrate with a <I>T</I><SUB>c</SUB> of 106 K and a <I>J</I><SUB>c</SUB> of 1.7×10<SUP>4</SUP> A/cm<SUP>2</SUP> by Dual-Magnetron Sputtering and Post Annealing (1991)
  • Nabatame Toshihide ID: 9000252766345

    Hitachi Research Laboratory, Hitachi Ltd. (1992 from CiNii)

    Articles in CiNii:1

    • The Anisotropy of Transport Critical Current Densities in Tl<SUB>2</SUB>Ba<SUB>2</SUB>Ca<SUB>2</SUB>Cu<SUB>3</SUB>O<I><SUB>x</SUB></I> Thin Films under Magnetic Fields up to 20 T (1992)
  • Nabatame Toshihide ID: 9000252973942

    Hitachi Research Laboratory, Hitachi Ltd. (1990 from CiNii)

    Articles in CiNii:1

    • Properties of Tl<SUB>2</SUB>Ba<SUB>2</SUB>Ca<SUB>2</SUB>Cu<SUB>3</SUB>O<I><SUB>x</SUB></I> Thin Films with a Critical Temperature of 122 K Prepared by Excimer Laser Ablation (1990)
  • Nabatame Toshihide ID: 9000252976217

    Hitachi Research Laboratory of Hitachi, Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Magnetic Field Dependence of Critical Current Density of Polycrystalline Tl-2223 Wire (1991)
  • Nabatame Toshihide ID: 9000252988934

    Hitachi Research Laboratory, Hitachi Ltd. (1993 from CiNii)

    Articles in CiNii:1

    • Comparison of Transport Properties between Tl-(1223) and Tl-(2223) Phases of Tl–Ba–Ca–Cu–O Systems (1993)
  • Nabatame Toshihide ID: 9000252989284

    Superconductivity Research Laboratory, International Superconductivity Technology Center (1993 from CiNii)

    Articles in CiNii:1

    • Preparation and Transport Properties of TlBa<SUB>2</SUB>Ca<SUB>2</SUB>Cu<SUB>3</SUB>O<I><SUB>y</SUB></I> Thin Films by Metalorganic Deposition (1993)
  • Nabatame Toshihide ID: 9000258149513

    Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)2 with Tetrahydrofuran Solvent. (2000)
  • Nabatame Toshihide ID: 9000258164400

    MIRAI Project, Association of Super-Advanced Electronics Technology (ASET) (2003 from CiNii)

    Articles in CiNii:1

    • Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and .GAMMA.-Al2O3 Films using 18O Isotope (2003)
  • Nabatame Toshihide ID: 9000258164912

    MIRAI Project, Association of Super-Advanced Electronics Technology (ASET) (2003 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of a Thin HfO2/Ultrathin SiO2/Si Structure: Interfacial Si Oxidation and Silicidation. (2003)
  • Nabatame Toshihide ID: 9000258179284

    MIRAI-ASET, AIST (2005 from CiNii)

    Articles in CiNii:1

    • Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition (2005)
  • Nabatame Toshihide ID: 9000258180249

    MIRAI, Association of Super-Advanced Electronics Technologies (2005 from CiNii)

    Articles in CiNii:1

    • Study on Oxynitride Buffer Layers in HfO2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance (2005)
  • Nabatame Toshihide ID: 9000258180584

    MIRAI, Association of Super-Advanced Electronics Technologies (ASET) (2005 from CiNii)

    Articles in CiNii:1

    • Silicon-Atom Induced Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO2 Dielectrics (2005)
  • Nabatame Toshihide ID: 9000258184509

    MIRAI-ASET, AIST (2005 from CiNii)

    Articles in CiNii:1

    • Fabrication of Hf(C)N Films on SiO2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor (2005)
  • Nabatame Toshihide ID: 9000345193851

    National Insitute for Materials Science (2016 from CiNii)

    Articles in CiNii:1

    • Effect of Cu(Ti)/IGZO-Junction Interface on IGZO-TFT Performance (2016)
  • Nabatame Toshihide ID: 9000345394546

    Hitachi Ltd. (2002 from CiNii)

    Articles in CiNii:1

    • Preparation and Electrical properties of SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> ferroelectric capacitors using SrRuO<SUB>3</SUB> top electrodes (2002)
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