Search Results1-20 of  20

  • Nagamatsu Kentaro ID: 9000017307767

    Articles in CiNii:1

    • The reaction of 〔(1-azaazulen-2-yl)imino〕phosphorane with arylaldehydes: formation of bis〔(1-azaazulen-2-yl)amino〕arylmethanes (2010)
  • NAGAMATSU Kentaro ID: 9000001814561

    Faculty of Science and Technology, Meijo University (2010 from CiNii)

    Articles in CiNii:2

    • Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact (2006)
    • Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates (2010)
  • NAGAMATSU Kentaro ID: 9000301717343

    Department of Medical Oncology and Hematology, Oita University Faculty of Medicine (2015 from CiNii)

    Articles in CiNii:1

    • Hypofibrinogenemia associated with steroid therapy for the patients who developed GVHD after allogeneic stem cell transplantation (2015)
  • NAGAMATSU Kentaro ID: 9000396109169

    Department of Medical Oncology and Hematology, Oita University Faculty of Medicine (2018 from CiNii)

    Articles in CiNii:1

    • Successful treatment of secondary graft failure in a mixed-phenotype acute leukemia patient with haploidentical hematopoietic stem cell transplantation and post-transplant cyclophosphamide administration (2018)
  • NAGAMATSU Kentaro ID: 9000399852513

    Department of Medical Oncology and Hematology, Oita University Faculty of Medicine (2019 from CiNii)

    Articles in CiNii:1

    • Philadelphia chromosome-positive acute lymphoblastic leukemia relapsing with an anterior chamber lesion of the eye (2019)
  • Nagamatsu Kentaro ID: 9000018752299

    Articles in CiNii:5

    • Reactions of 2-Triphenylphosphoimino-1-azaazulenes with Aryl Isocyanates and Aryl Isothiocyanates (2006)
    • Synthesis and reactions of 3-ethynyl-2-(triphenylphosphoimino)-1-azaazulenes (2007)
    • Reactions of 3-Phenyl-8-triphenylphosphoimino-1-azaazulene with Aryl Isocyanate, Aryl Isothiocyanate, and Carbon Disulfide (2004)
  • Nagamatsu Kentaro ID: 9000048796019

    Articles in CiNii:1

    • Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient (2009)
  • Nagamatsu Kentaro ID: 9000283740720

    Department of Chemistry, Faculty of Science, Yamaguchi Univ. (2004 from CiNii)

    Articles in CiNii:1

    • Reaction of 3-phenyl-8-triphenylphosphoimino-1-azaazulene with isocyanates (2004)
  • Nagamatsu Kentaro ID: 9000292881679

    Department of Applied Chemistry, Waseda University (2015 from CiNii)

    Articles in CiNii:1

    • Poly(1,4-phenylene sulfide) (PPS) Synthesis via Oxidative Polymerization of Diphenyl Disulfide: Mechanistic Insight into the Selective Formation of 1,4-Thiophenylene Chain (2015)
  • Nagamatsu Kentaro ID: 9000345198510

    Department of Medical Oncology and Hematology, Oita University Faculty of Medicine, Japan (2016 from CiNii)

    Articles in CiNii:1

    • Successful Cord Blood Stem Cell Transplantation for an Adult Case of Chronic Active Epstein-Barr Virus Infection (2016)
  • Nagamatsu Kentaro ID: 9000397857126

    Articles in CiNii:1

    • Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy (2018)
  • Nagamatsu Kentaro ID: 9000397857132

    Articles in CiNii:1

    • m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates (2018)
  • Nagamatsu Kentaro ID: 9000401755488

    Articles in CiNii:1

    • Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact (2006)
  • Nagamatsu Kentaro ID: 9000401982734

    Articles in CiNii:1

    • Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy (2018)
  • Nagamatsu Kentaro ID: 9000402032904

    Articles in CiNii:1

    • The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer (2015)
  • Nagamatsu Kentaro ID: 9000402036044

    Articles in CiNii:1

    • Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer (2016)
  • Nagamatsu Kentaro ID: 9000402036102

    Articles in CiNii:1

    • Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering (2016)
  • Nagamatsu Kentaro ID: 9000402051956

    Articles in CiNii:1

    • Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy (2018)
  • Nagamatsu Kentaro ID: 9000402401194

    Articles in CiNii:1

    • Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN (2019)
  • Nagamatsu Kentaro ID: 9000402939360

    Articles in CiNii:1

    • Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE (2019)
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