Search Results1-13 of  13

  • NAKAHARAI Shu ID: 9000002168815

    MIRAI-Association of Super-Advanced Electronics Technology (ASET) (2008 from CiNii)

    Articles in CiNii:3

    • Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs (2005)
    • High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique (2005)
    • Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process (2008)
  • NAKAHARAI Shu ID: 9000004964384

    MIRAI-ASET (2008 from CiNii)

    Articles in CiNii:12

    • Local Strain Evaluation of Strained-SOI Structures (2005)
    • Device and Substrate Technologies for Advanced CMOS with Mobility Enhancement (2006)
    • Fabrication and Electrical Characterization of Strained Si-on-insulator/Strained SiGe-on-insulator Dual Channel CMOS structures with High-Mobility Channels (2006)
  • NAKAHARAI Shu ID: 9000019052387

    Collaborative Research Team Green Nanoelectronics Center (GNC) (2012 from CiNii)

    Articles in CiNii:1

    • Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon (2012)
  • Nakaharai Shu ID: 9000258168572

    MIRAI Project, Association of Super-Advanced Electronics Technology (ASET) (2003 from CiNii)

    Articles in CiNii:1

    • Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method (2003)
  • Nakaharai Shu ID: 9000319555574

    Articles in CiNii:1

    • Edge mixing dynamics in graphene p-n junctions in the quantum Hall regime (2015)
  • Nakaharai Shu ID: 9000323844290

    Articles in CiNii:1

    • Parity effect of bipolar quantum Hall edge transport around graphene antidots (2015)
  • Nakaharai Shu ID: 9000376928600

    WPI-MANA, NIMS (2016 from CiNii)

    Articles in CiNii:1

    • Shot noise on pn junction of graphene in the quantum Hall regime (2016)
  • Nakaharai Shu ID: 9000401565312

    Articles in CiNii:1

    • Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process (2008)
  • Nakaharai Shu ID: 9000401572081

    Articles in CiNii:1

    • 2011-12-12 (2011)
  • Nakaharai Shu ID: 9000401717772

    Articles in CiNii:1

    • Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method (2003)
  • Nakaharai Shu ID: 9000401988796

    Articles in CiNii:1

    • Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier (2014)
  • Nakaharai Shu ID: 9000402029137

    Articles in CiNii:1

    • Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit (2015)
  • Nakaharai Shu ID: 9000402401200

    Articles in CiNii:1

    • Observation of room temperature electronic localization through a single graphene layer on sapphire (2019)
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