Search Results1-19 of  19

  • Nakane Ryosho ID: 9000024933602

    Articles in CiNii:1

    • Ultrathin Ge-on-insulator metal source/drain p-channel metal-oxide-semiconductor field-effect transistors fabricated By low-temperature molecular-beam epitaxy (Special issue: Solid state devices and materials) (2007)
  • Nakane Ryosho ID: 9000025013898

    Articles in CiNii:1

    • Magnetoresistance of a spin metal-oxide-semiconductor field-effect transistor with ferromagnetic MnAs source and drain contacts (2010)
  • Nakane Ryosho ID: 9000025029683

    Articles in CiNii:1

    • Tunneling magnetoresistance in a Mn δ-doped GaAs/AlAs/MnAs heterostructure (2007)
  • Nakane Ryosho ID: 9000025087335

    Articles in CiNii:1

    • Fabrication of 3-5 on insulator structures on Si using microchannel epitaxy with a two-step growth technique (2007)
  • Nakane Ryosho ID: 9000025121639

    Articles in CiNii:1

    • Interface-controlled self-align source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers (Selected topics in Applied physics: Technology evolution for silicon nano-electronics) (2011)
  • NAKANE Ryosho ID: 9000002174696

    School of Engineering, The Univ. of Tokyo (2006 from CiNii)

    Articles in CiNii:1

    • Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique (2006)
  • NAKANE Ryosho ID: 9000018185675

    Department of Electrical Engineering and Information Systems, The University of Tokyo (2012 from CiNii)

    Articles in CiNii:3

    • A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology : Pseudo-Spin-MOSFET (2010)
    • Self-Aligned Metal Source/Drain In_xGa_<1-x>As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy (2011)
    • Electron Mobility Enhancement of Extremely Thin Body In_<0.7>Ga_<0.3>As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers (2012)
  • NAKANE Ryosho ID: 9000018630534

    Univ. of Tokyo Fac. Eng. (2017 from CiNii)

    Articles in CiNii:7

    • High Performance GeO_2/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping (2010)
    • Self-aligned metal Source/Drain In_xGa_<1-x>As n-MOSFETs using Ni-InGaAs alloy (2011)
    • Enhancement Technologies and Physical Understanding of Electron Mobility in III-V n-MOSFETs with Strain and MOS Interface Buffer Engineering (2012)
  • NAKANE Ryosho ID: 9000242869675

    The University of Tokyo (2014 from CiNii)

    Articles in CiNii:8

    • Current-Induced Magnetization Switching in epitaxial MnAs/NiAs/MnAs heterostructures (2005)
    • Design and performanoe of pseudo-spin-MOSFETs usingnano-CMOS devioes (2013)
    • Performance analysis of auto-associative neural networks on diluted modular networks (2014)
  • Nakane Ryosho ID: 9000401567531

    Articles in CiNii:1

    • 2010-01-08 (2010)
  • Nakane Ryosho ID: 9000401569899

    Articles in CiNii:1

    • 2011-01-21 (2011)
  • Nakane Ryosho ID: 9000401571680

    Articles in CiNii:1

    • 2011-10-31 (2011)
  • Nakane Ryosho ID: 9000401572072

    Articles in CiNii:1

    • 2011-12-16 (2011)
  • Nakane Ryosho ID: 9000401757940

    Articles in CiNii:1

    • 2007-04-24 (2007)
  • Nakane Ryosho ID: 9000401762086

    Articles in CiNii:1

    • 2007-09-07 (2007)
  • Nakane Ryosho ID: 9000401766268

    Articles in CiNii:1

    • Tunneling Magnetoresistance in a Mn δ-doped GaAs/AlAs/MnAs Heterostructure (2007)
  • Nakane Ryosho ID: 9000401778357

    Articles in CiNii:1

    • 2009-04-20 (2009)
  • Nakane Ryosho ID: 9000401792244

    Articles in CiNii:1

    • 2010-11-22 (2010)
  • Nakane Ryosho ID: 9000402047794

    Articles in CiNii:1

    • Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs (2018)
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