Search Results1-16 of  16

  • Shimomura Naoharu ID: 9000024980410

    Articles in CiNii:1

    • High-speed magnetoresistive random-access memory random number generator using error-correcting code (Special issue: Solid state devices and materials) (2011)
  • Naoharu Shimomura ID: 9000403273142

    Articles in CiNii:1

    • Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system (2018)
  • SHIMOMURA Naoharu ID: 9000004965852

    Toshiba Corp. (1997 from CiNii)

    Articles in CiNii:1

    • The Effect of Down-Flow Cleaning Process on Materials Used in an EB System (1997)
  • SHIMOMURA Naoharu ID: 9000005570939

    EBM Engineering and Manufacturing Department, Semiconductor Equipment Division, Toshiba Machine Co., Ltd. (1997 from CiNii)

    Articles in CiNii:4

    • Observation of In Growth Modes on Si(111)-√<3>×√<3>-Ga Using an Ultrahigh-Vacuum Scanning Electron Microscope (1995)
    • Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D (1994)
    • Evaluation of Shaping Gain Adjustment Accuracy Using Atomic Force Microscope in Variably Shaped Electron-Beam Writing Systems (1997)
  • SHIMOMURA Naoharu ID: 9000005716415

    Advanced Semiconductor Devices Research Labs., R&D Center, Toshiba Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Fabrication of Micro-Marks for Electron-Beam Lithography (1997)
  • SHIMOMURA Naoharu ID: 9000005716549

    R&D Center, Toshiba Corp. (1997 from CiNii)

    Articles in CiNii:1

    • The Effect of Down-Flow Cleaning Process on Materials Used in an Electron Beam System (1997)
  • SHIMOMURA Naoharu ID: 9000045996616

    Articles in CiNii:20

    • Fast magnetization reversal by using spin injection in longitudinal and perpendicular magnetic nano-pillars (2010)
    • 携帯端末のキャッシュメモリ用途を目指した垂直磁化MTJの開発 (マルチメディアストレージ) (2014)
    • 携帯端末のキャッシュメモリ用途を目指した垂直磁化MTJの開発 (磁気記録・情報ストレージ) (2014)
  • SHIMOMURA Naoharu ID: 9000404345334

    Corporate Research & Development Center, Toshiba Corporation (2019 from CiNii)

    Articles in CiNii:1

    • Emerging spintronics memories:STT-MRAM, Spin-Hall MRAM, and Voltage Control Spintronic Memory (2019)
  • Shimomura Naoharu ID: 9000258134498

    R&D Center, Toshiba Corp., 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1997 from CiNii)

    Articles in CiNii:1

    • The Effect of Down-Flow Cleaning Process on Materials Used in an Electron Beam System. (1997)
  • Shimomura Naoharu ID: 9000258134582

    Advanced Semiconductor Devices Research Labs., R&D Center, Toshiba Corporation, 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Fabrication of Micro-Marks for Electron-Beam Lithography. (1997)
  • Shimomura Naoharu ID: 9000401667970

    Articles in CiNii:1

    • Fabrication of Micro-Marks for Electron-Beam Lithography (1997)
  • Shimomura Naoharu ID: 9000401668027

    Articles in CiNii:1

    • The Effect of Down-Flow Cleaning Process on Materials Used in an Electron Beam System (1997)
  • Shimomura Naoharu ID: 9000401781948

    Articles in CiNii:1

    • Ion Beam Etching Technology for High-Density Spin Transfer Torque Magnetic Random Access Memory (2009)
  • Shimomura Naoharu ID: 9000401796575

    Articles in CiNii:1

    • High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code (2011)
  • Shimomura Naoharu ID: 9000401982880

    Articles in CiNii:1

    • Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system (2018)
  • Shimomura Naoharu ID: 9000401997444

    Articles in CiNii:1

    • High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code (2011)
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