Search Results1-20 of  28

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  • Narita Tetsuo ID: 9000009281709

    Articles in CiNii:1

    • Hybrid Method for Basket-Marketing Prediction (1999)
  • Narita Tetsuo ID: 9000241668418

    Articles in CiNii:1

    • Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (Special Issue : Recent Advances in Nitride Semiconductors) (2013)
  • NARITA TETSUO ID: 9000347100362

    豊田中研 (2012 from CiNii)

    Articles in CiNii:1

    • Quantitative study on elemental composition analysis using hard X-ray photoelectron spectroscopy (HAXPES) (2012)
  • NARITA Tetsuo ID: 9000004782172

    Department of Electronics and Akasaki Research Center, Nagoya University (2002 from CiNii)

    Articles in CiNii:2

    • Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate (2002)
    • Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate (2002)
  • NARITA Tetsuo ID: 9000006209938

    Articles in CiNii:5

    • 電流注入発光寿命によるGaN系LEDにおける内部量子効率の評価 (2006)
    • 電流注入発光寿命によるGaN系LEDにおける内部量子効率の評価 (2006)
    • Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime (2006)
  • NARITA Tetsuo ID: 9000017733306

    Toyota Central R&D Labs., Inc. (2010 from CiNii)

    Articles in CiNii:4

    • Characterization of GaN vertical pn diodes (2009)
    • Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy (2010)
    • Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy (2010)
  • Narita Tetsuo ID: 9000083525225

    Articles in CiNii:1

    • Interface Properties of Al$_{2}$O$_{3}$/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces (2012)
  • Narita Tetsuo ID: 9000258432316

    International University of Health and Welfare (2013 from CiNii)

    Articles in CiNii:1

    • Using Data Mining to Investigate the Factors Influencing Nurses to Quit Their Jobs—From the Perspectives of Bed Management, Working Environment and Job Satisfaction— (2013)
  • Narita Tetsuo ID: 9000399538158

    Articles in CiNii:1

    • Examining Factors in Relation to Nursing Resignations Using Data Mining:the Second Report ─ Analysis Focusing on Management Index ─ (2017)
  • Narita Tetsuo ID: 9000399538166

    Articles in CiNii:1

    • Examining Factors in Relation to Nursing Resignations Using Data Mining:the Third Report ─ Analysis Focusing on Personal Attributes ─ (2017)
  • Narita Tetsuo ID: 9000401978855

    Articles in CiNii:1

    • Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures (2018)
  • Narita Tetsuo ID: 9000401979431

    Articles in CiNii:1

    • Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer (2019)
  • Narita Tetsuo ID: 9000401980113

    Articles in CiNii:1

    • P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation (2016)
  • Narita Tetsuo ID: 9000401982365

    Articles in CiNii:1

    • Erratum: "Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface" (2018)
  • Narita Tetsuo ID: 9000401982562

    Articles in CiNii:1

    • Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations (2018)
  • Narita Tetsuo ID: 9000402006902

    Articles in CiNii:1

    • Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces (2012)
  • Narita Tetsuo ID: 9000402017425

    Articles in CiNii:1

    • Reliability Evaluation of Al2O3Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (2013)
  • Narita Tetsuo ID: 9000402036012

    Articles in CiNii:1

    • Strain-induced step bunching in orientation-controlled GaN on Si (2016)
  • Narita Tetsuo ID: 9000402041482

    Articles in CiNii:1

    • 2017-03-21 (2017)
  • Narita Tetsuo ID: 9000402463174

    Articles in CiNii:1

    • 2019-05-09 (2019)
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