Search Results1-8 of  8

  • NARUKE Kiyomi ID: 9000005822937

    SanDisk Corporation (2011 from CiNii)

    Articles in CiNii:2

    • A 44mm^2 4-Bank 8-word Page-Read 64Mb Flash Memory with Flexible Block Redundancy and Fast Accurate Word-line Voltage Controller (2002)
    • A 151mm^2 64Gbit 2bit/cell NAND Flash Memory Fabricated in 24nm Technology (2011)
  • NARUKE Kiyomi ID: 9000242373953

    Center for Semiconductor Research & Development, Semiconductor Co., Toshiba Co. (2010 from CiNii)

    Articles in CiNii:1

    • Multimedia Storage (2010)
  • NARUKE Kiyomi ID: 9000253323252

    Semiconductor Device Engineering Laboratory, Toshiba Co. (1985 from CiNii)

    Articles in CiNii:1

    • Radiation Hardened Devices (1985)
  • Naruke Kiyomi ID: 9000004779057

    Toshiba Corp. (1993 from CiNii)

    Articles in CiNii:1

    • A New Self-Data-Refresh Scheme for 16Mb Flash EEPROM : to realize sector erase operation (1993)
  • Naruke Kiyomi ID: 9000004872668

    Semiconductor Device Engineering Laboratory, Toshiba Corporation:Memory Division, Toshiba Corporation (1994 from CiNii)

    Articles in CiNii:1

    • A 16-Mb Flash EEPROM with a New Self-Data-Refresh Scheme for a Sector Erase Operation (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994)) (1994)
  • Naruke Kiyomi ID: 9000252952351

    Graduate School of Science and Engineering, Tokyo Institute of Technology (1982 from CiNii)

    Articles in CiNii:1

    • Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy (1982)
  • Naruke Kiyomi ID: 9000392690687

    Articles in CiNii:1

    • Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy (1982)
  • Naruke Kiyomi ID: 9000401591813

    Articles in CiNii:1

    • Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy (1982)
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