Search Results1-20 of  60

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  • Nishino Shigehiro ID: 9000009329178

    Articles in CiNii:1

    • Epitaxial Growth of SiC by Sublimation Close Space Technique (2000)
  • NISHINO Shigehiro ID: 9000005528036

    Department of Electronics, Faculty of Engineering, Kyoto University (1980 from CiNii)

    Articles in CiNii:3

    • Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition (1975)
    • Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition (1980)
    • Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I) (1980)
  • NISHINO Shigehiro ID: 9000005595175

    Department of Electronics and Information Science, Kyoto Institute of Technology (1998 from CiNii)

    Articles in CiNii:1

    • Simple Hexagonal Coulomb Crystal near a Deformed Plasma Sheath Boundary in a Dusty Plasma (1998)
  • NISHINO Shigehiro ID: 9000005753027

    Department of Electronics, Kyoto University (1981 from CiNii)

    Articles in CiNii:1

    • Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS (1981)
  • NISHINO Shigehiro ID: 9000006511834

    Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology (1999 from CiNii)

    Articles in CiNii:1

    • Selective Epitaxial Growth of Silicon Carbide on Silicon using HMDS (1999)
  • NISHINO Shigehiro ID: 9000021402837

    Articles in CiNii:1

    • Model Experiments of Sheet-Extrusion Process (1968)
  • NISHINO Shigehiro ID: 9000107307804

    Department of Electronics and Information Science, Kyoto Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates (2004)
  • NISHINO Shigehiro ID: 9000107341667

    Department of Electronics and Information Science, Kyoto Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources (2005)
  • NISHINO Shigehiro ID: 9000107349055

    Department of Electronics and Information Science, Kyoto Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Thermal Etching of 6H-SiC Substrate Surface (2003)
  • NISHINO Shigehiro ID: 9000107355702

    Department of Electronics and Information Science, Kyoto Institute of Technology (1997 from CiNii)

    Articles in CiNii:1

    • Preparation of Stable F-Doped SiO_2 Thin Films from Si(NCO)_4/SiF_4/O_2 Gas Mixtures Using a Conventional Capacitively Coupled RF Plasma Source (1997)
  • NISHINO Shigehiro ID: 9000107374183

    Department of Electronics and Information Science, Kyoto Institute of Technology (1997 from CiNii)

    Articles in CiNii:1

    • Analyses of an Oriented Diamond Nucleation Processes on Si Substrate by Hot Filament Chemical Vapor Deposition (1997)
  • NISHINO Shigehiro ID: 9000107375870

    Department of Electronics and Information Science, Kyoto Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Analyses of Early Stages of Vertically Aligned Carbon Nanotube Growth by Plasma-Enhanced Chemical Vapor Deposition (2005)
  • NISHINO Shigehiro ID: 9000107382539

    Department of Electronics and Information Science, Kyoto Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • Gas Phase Syntheses of Single-Walled Carbon Nanotubes by Chemical Vapor Deposition Using Hot filament and Plasma (2004)
  • NISHINO Shigehiro ID: 9000253648935

    Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology (1996 from CiNii)

    Articles in CiNii:1

    • Identification of the Topmost Atomic Layer of 6H-SiC(0001) Surface by CAICISS. (1996)
  • Nishino Shigehiro ID: 9000004335954

    Articles in CiNii:10

    • 耐環境半導体材料SiCの研究開発と将来 (1986)
    • 青色発光ダイオ-ドの動向 (オプト・エレクトロニック素子<特集>) (1987)
    • SiCの気相成長 : エピタクシー (1974)
  • Nishino Shigehiro ID: 9000252759440

    Department of Electrical Engineering, Kyoto University (1986 from CiNii)

    Articles in CiNii:1

    • SiO<SUB>2</SUB> Film Deposition by KrF Excimer Laser Irradiation (1986)
  • Nishino Shigehiro ID: 9000252941350

    Department of Electronics, Faculty of Engineering, Kyoto University (1975 from CiNii)

    Articles in CiNii:1

    • Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition (1975)
  • Nishino Shigehiro ID: 9000252948273

    Department of Electronics, Faculty of Engineering, Kyoto University (1980 from CiNii)

    Articles in CiNii:1

    • Blue-emitting diodes of 6H-SiC prepared by chemical vapor deposition. (1980)
  • Nishino Shigehiro ID: 9000252955045

    Department of Electrical Engineering, Kyoto University (1984 from CiNii)

    Articles in CiNii:1

    • Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC (1984)
  • Nishino Shigehiro ID: 9000252956837

    Department of Electrical Engineering, Kyoto University (1985 from CiNii)

    Articles in CiNii:1

    • Plasma Etching of CVD Grown Cubic SiC Single Crystals (1985)
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