Search Results1-20 of  28

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  • Noda Shuichi ID: 9000025069108

    Articles in CiNii:1

    • Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching (2006)
  • NODA Shuichi ID: 9000001623190

    Institute of Fluid Science, Tohoku University (2005 from CiNii)

    Articles in CiNii:1

    • Formation of Oxy-nitride Films using Pulse Time Modulated Nitrogen Plasma and Suppression of VUV Radiation Damage (2005)
  • NODA Shuichi ID: 9000001814466

    Institute of Fluid Science, Tohoku University (2006 from CiNii)

    Articles in CiNii:1

    • Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching (2006)
  • NODA Shuichi ID: 9000005623902

    Semiconductor Technology Laboratory, Oki Electric Industry Co, .Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • MOS Gate Etching Using an Advanced Magnetron Etching System : Etching and Deposition Technology : (1989)
  • NODA Shuichi ID: 9000005733805

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • SiC/SiN Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition (1995)
  • NODA Shuichi ID: 9000014258523

    ASET (1998 from CiNii)

    Articles in CiNii:1

    • Measurement of Electron Energy Distribution Function by RF-Biased Optical Probe Method (1998)
  • NODA Shuichi ID: 9000107345982

    Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:1

    • Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing (1998)
  • NODA Shuichi ID: 9000107346101

    Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:1

    • Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma (1998)
  • NODA Shuichi ID: 9000107386410

    Institute of Fluid Science, Tohoku University (2006 from CiNii)

    Articles in CiNii:1

    • New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching (2006)
  • Noda Shuichi ID: 9000020198295

    Oki Elec. Ind. Co., Ltd. (1985 from CiNii)

    Articles in CiNii:1

    • 寄書 (1985)
  • Noda Shuichi ID: 9000020271165

    Dept. of Chem. Eng., Niigata Univ. (1984 from CiNii)

    Articles in CiNii:1

    • 寄書 (1984)
  • Noda Shuichi ID: 9000252968336

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • MOS Gate Etching Using an Advanced Magnetron Etching System (1989)
  • Noda Shuichi ID: 9000252985186

    Oki Electric Industry Co., Ltd., Semiconductor Technology Laboratory (1993 from CiNii)

    Articles in CiNii:1

    • Improvement in Radiation Stability of SiN X-Ray Mask Membranes (1993)
  • Noda Shuichi ID: 9000258125198

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., 550–5 Higashiasakawa, Hachioji, Tokyo 193, Japan (1995 from CiNii)

    Articles in CiNii:1

    • SiC/SiN Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition. (1995)
  • Noda Shuichi ID: 9000258141298

    Plasma Technology Laboratory, Association of Super–Advanced Electronics Technologies (ASET), 292 Yoshida–cho, Totsuka, Yokohama, Kanagawa 244–0817, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma. (1998)
  • Noda Shuichi ID: 9000258141557

    Plasma Technology Laboratory, Association of Super–advanced Electronics Technologies (ASET), 292 Yoshida–cho, Totsuka–ku, Yokohama, Kanagawa 244, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing. (1998)
  • Noda Shuichi ID: 9000392711713

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • MOS Gate Etching Using an Advanced Magnetron Etching System (1989)
  • Noda Shuichi ID: 9000392721265

    Articles in CiNii:1

    • Improvement in Radiation Stability of SiN X-Ray Mask Membranes (1993)
  • Noda Shuichi ID: 9000401612449

    Articles in CiNii:1

    • MOS Gate Etching Using an Advanced Magnetron Etching System (1989)
  • Noda Shuichi ID: 9000401636986

    Articles in CiNii:1

    • Improvement in Radiation Stability of SiN X-Ray Mask Membranes (1993)
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