Search Results1-20 of  87

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  • Noya Atsushi ID: 9000025098575

    Articles in CiNii:1

    • Oxidation Characteristics of Thin Al-Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu (Special Issue : Advanced Metallization for ULSI Applications) (2012)
  • Noya Atsushi ID: 9000025117336

    Articles in CiNii:1

    • Evolution of microstructures in nanocrystalline VN barrier leading to failure in Cu/VN/SiO2/Si systems (Special issue: Advanced metallization for ULSI applications) (2010)
  • NOYA Atsushi ID: 1000060133807

    Articles in CiNii:135

    • Characterizations and Growth Mechanisms of the Surface Oxidized Layer Formed on Al-Nb-(N) Alloy Films (1992)
    • Thermal Stability of the Cu_2Y/Si Contact System and Its Application to the Cu Metallization (1992)
    • Preparation of the CuTi_2 Intermetallic Compound Film and Its Application to the Cu/CuTi_2/Si Contact Structure (1992)
  • NOYA Atsushi ID: 9000001181742

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration (2003)
  • NOYA Atsushi ID: 9000004824503

    Dept. of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of ZrN Barrier in W/ZrN/Poly-Si Gate Electrode Configuration (2001)
  • NOYA Atsushi ID: 9000004838200

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration(Electronic Materials) (2003)
  • NOYA Atsushi ID: 9000005581638

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1997 from CiNii)

    Articles in CiNii:1

    • Preparation of WN_x Films and Their Diffusin Barrier Properties in Cu/Si Contact Systems (1997)
  • NOYA Atsushi ID: 9000005581747

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1997 from CiNii)

    Articles in CiNii:1

    • Solid-Phase Reactions in Polymorphic Epitaxial Contact Systems of Al/YSi_<2-x>/Si (1997)
  • NOYA Atsushi ID: 9000005598390

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1999 from CiNii)

    Articles in CiNii:1

    • Effectiveness of Al_<12>W Layer on Suppression of Spontaneous Reaction in Al/Al_<12>W/W_2N/Si Contact Systems (1999)
  • NOYA Atsushi ID: 9000005654404

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1994 from CiNii)

    Articles in CiNii:1

    • Oriented Growth of Cu(110) on YSi_<2-x>(1100)/Si(100) and Diffusion Behavior in Copper Silicide Formation (1994)
  • NOYA Atsushi ID: 9000107325835

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • Formation of Preferentially Oriented Cu [111] Layer on Nb [110] Barrier on SiO_2 (2004)
  • Noya Atsushi ID: 9000072217416

    Articles in CiNii:1

    • Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC (2008)
  • Noya Atsushi ID: 9000072848212

    Articles in CiNii:1

    • Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2 (2006)
  • Noya Atsushi ID: 9000252759281

    Department of Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1986 from CiNii)

    Articles in CiNii:1

    • Characterization of Amorphous Silicon Barriers in Nb<SUB>3</SUB>Ge Josephson Tunnel Junctions (1986)
  • Noya Atsushi ID: 9000252762287

    Department of Electronic Engineering, Faculcy of Engineering, Kitami Institute of Technology (1990 from CiNii)

    Articles in CiNii:1

    • Stoichiometry of Ta–N Film and Its Application for Diffusion Barrier in the Al<SUB>3</SUB>Ta/Ta–N/Si Contact System (1990)
  • Noya Atsushi ID: 9000252764915

    Department of Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1992 from CiNii)

    Articles in CiNii:1

    • Characterizations and Barrier Properties of WN<I><SUB>x</SUB></I> Film in the Al<SUB>12</SUB>W/WN<I><SUB>x</SUB></I>/Si Contact System (1992)
  • Noya Atsushi ID: 9000252964008

    Department of Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1988 from CiNii)

    Articles in CiNii:1

    • Preparation of Mo-N Films and Characterization of Oxide Barriers in NbN/Mo-N Josephson Junctions (1988)
  • Noya Atsushi ID: 9000252964728

    Department of Electronics, Faculty of Engineering, Kitami Institute of Technology (1988 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterizations of Al<SUB>3</SUB>Ta Intermetallic Compound Films (1988)
  • Noya Atsushi ID: 9000252965849

    Department of Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1988 from CiNii)

    Articles in CiNii:1

    • Interaction of Al<SUB>3</SUB>Ta Intermetallic Compound Film with Si (1988)
  • Noya Atsushi ID: 9000252978110

    Department of Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology (1991 from CiNii)

    Articles in CiNii:1

    • Auger Electron Spectroscopy Study on the Characterization and Stability of the Cu<SUB>9</SUB>Al<SUB>4</SUB>/TiN/Si System (1991)
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