Search Results1-8 of  8

  • OGAWA Arito ID: 9000002168682

    MIRAI-ASET (2006 from CiNii)

    Articles in CiNii:3

    • Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs (2005)
    • Si-Capped Annealing of HfO_2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion (2006)
    • Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics (2006)
  • OGAWA Arito ID: 9000004970864

    MIRAI-ASET (2008 from CiNii)

    Articles in CiNii:6

    • Improvement of Transistor Performance and Insulator Reliability by Robust high-k/IL/Si Structure with High Temperature Wet Treatment after HfON Deposition (2006)
    • The role of the high-k/SiO_2 interface in the control of the threshold voltage for high-k MOS devices (2008)
    • Improvement of threshold voltage asymmetry by Al compositional modulation and partially silicided gate electrode for Hf-based high-k CMOSFETs (2005)
  • OGAWA Arito ID: 9000107377214

    Department of Electronics, Tohoku Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Estimation of Volume Lifetimes in Small Square Pillars of Silicon using Empirical Formulae (2003)
  • Ogawa Arito ID: 9000238771516

    Hitachi Kokusai Electric Inc. (2012 from CiNii)

    Articles in CiNii:1

    • C-11-2 Influence of Air Exposure after SiON Formation on the Gate-Dielectric Breakdown (2012)
  • Ogawa Arito ID: 9000258167592

    Department of Electronics, Tohoku Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Estimation of Volume Lifetimes in Small Square Pillars of Silicon using Empirical Formulae (2003)
  • Ogawa Arito ID: 9000401716393

    Articles in CiNii:1

    • Estimation of Volume Lifetimes in Small Square Pillars of Silicon using Empirical Formulae* (2003)
  • Ogawa Arito ID: 9000401751326

    Articles in CiNii:1

    • 2006-08-04 (2006)
  • Ogawa Arito ID: 9000402027961

    Articles in CiNii:1

    • Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off (2015)
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