Search Results1-9 of  9

  • Oh Jae Sub ID: 9000024990976

    Articles in CiNii:1

    • Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer (2012)
  • OH Jae Sub ID: 9000017504497

    National Nanofab Center (2011 from CiNii)

    Articles in CiNii:5

    • Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device (2010)
    • SONOS-Type Flash Memory with HfO_2 Thinner than 4nm as Trapping Layer Using Atomic Layer Deposition (2010)
    • Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer (2011)
  • OH Jae Sub ID: 9000107365468

    National Nanofab Center (2012 from CiNii)

    Articles in CiNii:1

    • Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer (2012)
  • OH Jae-Sub ID: 9000019238111

    Department of Electronics Engineering, Chungnam National University (2012 from CiNii)

    Articles in CiNii:1

    • Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO_2 and S_3N_4 as Trapping Layer (2012)
  • OH Jae-Sub ID: 9000021643675

    Department of Electronics Engineering, Chungnam National University|Division of Nano-Process Technology, National Nano Fab Center (NNFC) (2012 from CiNii)

    Articles in CiNii:1

    • Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO<sub>2</sub> and S<sub>3</sub>N<sub>4</sub> as Trapping Layer (2012)
  • Oh Jae Sub ID: 9000401568700

    Articles in CiNii:1

    • Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device (2010)
  • Oh Jae Sub ID: 9000401573493

    Articles in CiNii:1

    • Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer (2012)
  • Oh Jae Sub ID: 9000401795943

    Articles in CiNii:1

    • Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device (2011)
  • Oh Jae Sub ID: 9000401996818

    Articles in CiNii:1

    • Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3Blocking Layer in Flash Memory Device (2011)
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