Search Results1-20 of  45

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  • OHJI Yuzuru ID: 9000000318584

    Semiconductor Technology Development Center,Semiconductor and Integrated Circuit Division,Hitachi Ltd. (1997 from CiNii)

    Articles in CiNii:1

    • Application of high-K dielectric material thin film to DRAM capacitors-Issues and a direction. (1997)
  • OHJI Yuzuru ID: 9000001496374

    Renesas Technology Corporation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • OHJI Yuzuru ID: 9000001655223

    Semiconductor Technology Development Center Semiconductor & Integrated Circuit Division Hitachi Ltd. (1996 from CiNii)

    Articles in CiNii:1

    • Stack type capacitor technology for giga-bit DRAM's (1996)
  • OHJI Yuzuru ID: 9000002166733

    Advanced Device Development Dept., Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:3

    • A 90nm-node SOI Technology for RF Applications (2004)
    • Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug (2004)
    • Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology (2005)
  • OHJI Yuzuru ID: 9000002175612

    Semiconductor Leading Edge Technologies, Inc. (Selete) (2007 from CiNii)

    Articles in CiNii:2

    • Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm (2007)
    • Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs (2007)
  • OHJI Yuzuru ID: 9000004778555

    Semiconductor and IC Division, Hitachi, Ltd. (1996 from CiNii)

    Articles in CiNii:4

    • Time-Dependent Charging by X-ray Irradiation of Ultrathin SiO_2 films on Si (1996)
    • The Effect on the Tunnel Oxide Characteristics of Insulator Films on the Gate Electrode (1995)
    • The Effect on the Tunnel Oxide Characteristics of Insulator Films on the Gate Electrode (1995)
  • OHJI Yuzuru ID: 9000005928871

    Semiconductor & Integrated Circuits Division, Hitachi Ltd. (2000 from CiNii)

    Articles in CiNii:1

    • Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent (2000)
  • OHJI Yuzuru ID: 9000006696642

    (株)半導体先端テクノロジーズ (2008 from CiNii)

    Articles in CiNii:1

    • Future Evolution of CMOS Devices Targeting on High-performance and Low Power (2008)
  • OHJI Yuzuru ID: 9000014440717

    Semiconductor Leading Edge Technologies, Inc. (2009 from CiNii)

    Articles in CiNii:23

    • Impact of Actively Body-bias Controlled (ABC) SOI SRAM for Low-Voltage and High-Speed Operation (2004)
    • Experimental study on improvement of the Fermi-level pinning in metal/HfSiON gate stack (2007)
    • Wide Controllability of Flatband Voltage in metal/high-k gate stack using Ru-Mo alloys (2008)
  • OHJI Yuzuru ID: 9000107343858

    Process Technology Development Division, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond (2005)
  • OHJI Yuzuru ID: 9000107388598

    Advanced Device Development Department, Renesas Technology Corporation (2004 from CiNii)

    Articles in CiNii:1

    • W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory (2004)
  • OHJI Yuzuru ID: 9000253326665

    Semiconductor Technology Development Center, Semiconductor and Integrated Circuit Division, Hitachi Ltd. (1997 from CiNii)

    Articles in CiNii:1

    • Application of high-K dielectric material thin film to DRAM capacitors-Issues and a direction (1997)
  • Ohji Yuzuru ID: 9000046450098

    Articles in CiNii:1

    • Real-Time Measurement of W, TiN, and TaSiN Thicknesses Comprising Full-Metal Gates during Plasma Etching by Optical Interference of Etching Plasma (2008)
  • Ohji Yuzuru ID: 9000052232477

    Articles in CiNii:1

    • Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3Incorporation and Stack Variation (2008)
  • Ohji Yuzuru ID: 9000059978331

    Articles in CiNii:1

    • Accurate Determination of the Intrinsic Diffusivities of Boron, Phosphorus, and Arsenic in Silicon: The Influence of SiO2Films (2008)
  • Ohji Yuzuru ID: 9000073770315

    Articles in CiNii:1

    • Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-kP-Channel Field Effect Transistors Using Ion-Beam W (2009)
  • Ohji Yuzuru ID: 9000079998966

    Articles in CiNii:1

    • Thermally Unstable Ruthenium Oxide Gate Electrodes in Metal/High-kGate Stacks (2008)
  • Ohji Yuzuru ID: 9000252978406

    Articles in CiNii:1

    • Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO<SUB>2</SUB> Films (1991)
  • Ohji Yuzuru ID: 9000258149518

    Semiconductor & Integrated Circuits Division, Hitachi Ltd., 6-16-3 Shinmachi, Ome, Tokyo 198-8512, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)2 with Tetrahydrofuran Solvent. (2000)
  • Ohji Yuzuru ID: 9000258180444

    Renesas Technology Corperation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
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