Search Results1-11 of  11

  • OHKURA Kensaku ID: 9000002168499

    Research Center for Nanodevices and Systems, Hiroshima University (2004 from CiNii)

    Articles in CiNii:1

    • Room Temperature Operation of an Exclusive-OR Circuit Using a Highly-Doped Si Single-Electron Transistor (2004)
  • OHKURA Kensaku ID: 9000005905266

    Articles in CiNii:8

    • Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands (2007)
    • Temperature dependence of electrical characteristics of thin-film transistor with very thin SiNx film formed at source and drain region (2009)
    • Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands (2006)
  • OHKURA Kensaku ID: 9000018427553

    Research Institute for Nanodevice and Bio Systems, Hiroshima University (2011 from CiNii)

    Articles in CiNii:2

    • Estimation of Nitrogen Ion Energy in Sterilization Technology by Plasma Based Ion Implantation (2005)
    • Temperature Dependence of Drain Currents of Thin-Film Transistor with Very Thin SiN_x Film Formed at Source and Drain Region (2011)
  • OHKURA Kensaku ID: 9000107343886

    Research Center for Nanodevices and Systems (RCNS), Hiroshima University (2005 from CiNii)

    Articles in CiNii:1

    • Mobility and Number Fluctuations in MOS Structures (2005)
  • Ohkura Kensaku ID: 9000021419308

    Research Center for Nanodevices and Systems, Hiroshima University (2007 from CiNii)

    Articles in CiNii:1

    • Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain (2007)
  • Ohkura Kensaku ID: 9000024966277

    Articles in CiNii:1

    • Silicon single-electron memory having in-plane dot with double gates (Special issue: Microprocesses and nanotechnology) (2008)
  • Ohkura Kensaku ID: 9000025035319

    Articles in CiNii:1

    • Electrical characteristics of Si single-electron transistor based on multiple islands (Special issue: Microprocesses & nanotechnology) (2007)
  • Ohkura Kensaku ID: 9000267780049

    Articles in CiNii:1

    • Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands (2005)
  • Ohkura Kensaku ID: 9000267780083

    Articles in CiNii:1

    • Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor (2005)
  • Ohkura Kensaku ID: 9000267780089

    Articles in CiNii:1

    • Dynamical origin of low-mass fermions in Randall-Sundrum background (2005)
  • Ohkura Kensaku ID: 9000401780595

    Articles in CiNii:1

    • Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing (2009)
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