Search Results1-20 of  40

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  • OHMI Hiromasa ID: 9000404508319

    Division of Precision Science & Technology and Applied Physics, Graduate School of Engineering, Osaka University (2007 from CiNii)

    Articles in CiNii:1

    • Low-temperature and high-rate growth of epitaxial silicon by atmospheric-pressure plasma chemical vapor deposition (2007)
  • Ohmi Hiromasa ID: 9000024968088

    Articles in CiNii:1

    • Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma (Special Issue : Photovoltaic Science and Engineering) (2012)
  • OHMI Hiromasa ID: 9000005916111

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:7

    • Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching (2004)
    • Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD (2005)
    • High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD (2005)
  • OHMI Hiromasa ID: 9000107340749

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode (2006)
  • OHMI Hiromasa ID: 9000107340784

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture (2006)
  • OHMI Hiromasa ID: 9000107384309

    Articles in CiNii:1

    • Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei (2008)
  • OHMI Hiromasa ID: 9000107390285

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane (2006)
  • OHMI Hiromasa ID: 9000278211073

    Articles in CiNii:32

    • レーザー冷却法による中性原子ビームのコリメーション (1997)
    • 中性原子ビームのコリメーションとナノリソグラフィーへの応用 (1998)
    • レーザー冷却法を用いた異方性ドライエッチングプロセスの開発 (1998)
  • Ohmi Hiromasa ID: 9000024933743

    Articles in CiNii:1

    • Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition (Special issue: Solid state devices and materials) (2007)
  • Ohmi Hiromasa ID: 9000025015466

    Articles in CiNii:1

    • Purified silicon film formation from metallurgical-grade silicon by hydrogen-plasma-induced chemical transport (Special issue: Plasma processing) (2011)
  • Ohmi Hiromasa ID: 9000025094920

    Articles in CiNii:1

    • SiO2 formation by oxidation of crystalline and hydrogenated amorphous Si in atmospheric pressure plasma excited by very high frequency power (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials) (2008)
  • Ohmi Hiromasa ID: 9000025096005

    Articles in CiNii:1

    • High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure (Special Issue: Solid State Devices & Materials) (2006)
  • Ohmi Hiromasa ID: 9000025096008

    Articles in CiNii:1

    • Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode (Special Issue: Solid State Devices & Materials) (2006)
  • Ohmi Hiromasa ID: 9000025097073

    Articles in CiNii:1

    • Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition (Special Issue: Solid State Devices & Materials) (2006)
  • Ohmi Hiromasa ID: 9000258635906

    Osaka University (2012 from CiNii)

    Articles in CiNii:20

    • Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD (IV) (2003)
    • Deposition of Silicon Nitride Film by Atmospheric Pressure Plasma CVD-Effect of H2- (2003)
    • Preparation of polycrystalline silicon films by atmospheric pressure plasma CVD (2004)
  • Ohmi Hiromasa ID: 9000258650594

    Graduate School of Engineering, Osaka University (2009 from CiNii)

    Articles in CiNii:1

    • PFCs-free dry etching method by utilizing atmospheric-pressure plasma enhanced chemical transport (2009)
  • Ohmi Hiromasa ID: 9000258650597

    大阪大学 (2009 from CiNii)

    Articles in CiNii:1

    • 大気圧プラズマ化学輸送法とその将来展望(キーノートスピーチ) (2009)
  • Ohmi Hiromasa ID: 9000258654999

    Osaka University (2011 from CiNii)

    Articles in CiNii:1

    • Surface treatment characteristics of crystalline Si substrate by etchant source gas-free plasma etching method (2011)
  • Ohmi Hiromasa ID: 9000258657457

    Osaka University, JST CREST (2012 from CiNii)

    Articles in CiNii:1

    • Siのマイクロ波水素プラズマエッチングにおける水素ガス流れと熱伝導のシミュレーション (2012)
  • Ohmi Hiromasa ID: 9000258658846

    Osaka University (2013 from CiNii)

    Articles in CiNii:20

    • Low temperature and High-Rate Deposition of Si Films Using Atmospheric-Pressure Very High-Frequency Plasma:Fabrication and Characterization of Bottom-Gate Thin Film Transistors (2013)
    • 大気開放プラズマ酸化による太陽電池用Si表面パッシベーョン技術の開発 (2013)
    • High rate deposition of ZnO thin films using atmospheric-pressure radio-frequency plasma:Influence of working parameters on the growth of ZnO films (2013)
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