Search Results1-9 of  9

  • OHNISHI Teruhito ID: 9000001239586

    Semiconductor Company, Matsushita Electric Industrial Co., Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • Base Current Control in Low-V_<BE>-Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base (2004)
  • Ohnishi Teruhito ID: 9000252963532

    Semiconductor Reseach Center, Matsushita Electric Industrial Co., Ltd. (1988 from CiNii)

    Articles in CiNii:1

    • Low-Energy Double-Ion-Beam Deposition System (1988)
  • Ohnishi Teruhito ID: 9000254133857

    Faculty of Engineering Science, Osaka University (1984 from CiNii)

    Articles in CiNii:1

    • Structure Modulation of Fe–V Artificial Superstructure Films (1984)
  • Ohnishi Teruhito ID: 9000254135306

    Faculty of Engineering Science, Osaka University (1986 from CiNii)

    Articles in CiNii:1

    • Structural Aspects of Fe–Mg Artificial Superstructure Films Studied by X-Ray Diffraction (1986)
  • Ohnishi Teruhito ID: 9000254439405

    Matsushita Electric Industrial Co., Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • The Cleaning Technology Using the D.I. Water for SMT. The Cleaning Techniques of Silicon Wafers Using the D.I. Water for ULSI Fabrication Process.:—The Cleaning Techniques of Silicon Wafers Using the D. I. Water for ULSI Fabrication Process— (1991)
  • Ohnishi Teruhito ID: 9000392709208

    Articles in CiNii:1

    • Low-Energy Double-Ion-Beam Deposition System (1988)
  • Ohnishi Teruhito ID: 9000401606577

    Articles in CiNii:1

    • Low-Energy Double-Ion-Beam Deposition System (1988)
  • Ohnishi Teruhito ID: 9000401851641

    Faculty of Engineering Science, Osaka University (1984 from CiNii)

    Articles in CiNii:1

    • Structure Modulation of Fe-V Artificial Superstructure Films (1984)
  • Ohnishi Teruhito ID: 9000401854891

    Faculty of Engineering Science, Osaka University (1986 from CiNii)

    Articles in CiNii:1

    • 1986-01-15 (1986)
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