Search Results1-12 of  12

  • OHSHIMA Ichiro ID: 9000001505854

    Department of Electronic Engineering, Graduate School of Engineering, Tohoku University (2001 from CiNii)

    Articles in CiNii:4

    • Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃ (2001)
    • PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing (2001)
    • Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer (2000)
  • OHSHIMA Ichiro ID: 9000001585461

    Kumamoto University (2005 from CiNii)

    Articles in CiNii:1

    • A Development of High Sensitivity-Micro-Pressure Sensor as an element for High Resolution Tactile Sensing Application (2005)
  • OHSHIMA Ichiro ID: 9000002167431

    Graduate School of Science and Technology, Kumamoto University (2004 from CiNii)

    Articles in CiNii:1

    • Design and Fabrication of MOS Device Circuits with Reticle-Free Exposure Method (2004)
  • OHSHIMA Ichiro ID: 9000002962107

    The New Industry Creation Hatchery Center (NICHe), Tohoku University (2003 from CiNii)

    Articles in CiNii:11

    • Very High Reliability of Ultrathin Silicon Nitride Gate Dielectric Film for sub-100nm Generation (2003)
    • Thinning of SOI by numerically controlled Plasma CVM(Chemical Vaporization Machining) : Evaluation of Machined Surface for Electron Devices (2003)
    • Influence of the noble gas atom contained in the plasma oxides and nitrides on the electrical properties (2002)
  • OHSHIMA Ichiro ID: 9000006072872

    On-Site Sensing and Diagnosis Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST) (2006 from CiNii)

    Articles in CiNii:1

    • High Temperature and High Pressure Response of Aluminum Nitride Thin Films Prepared on Inconel Substrates (2006)
  • OHSHIMA Ichiro ID: 9000107333833

    On-site Sensing and Diagnosis Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST) (2006 from CiNii)

    Articles in CiNii:1

    • Piezoelectric Response to Pressure of Aluminum Nitride Thin Films Prepared on Nickel-Based Superalloy Diaphragms (2006)
  • OHSHIMA Ichiro ID: 9000107343893

    Graduate School of Science and Technology Kumamoto University (2005 from CiNii)

    Articles in CiNii:1

    • Design and Fabrication of MOS Device Circuits with Reticle-Free Exposure Method (2005)
  • Ohshima Ichiro ID: 9000021778739

    Private Office in Osaka Prefecture (1981 from CiNii)

    Articles in CiNii:1

    • Therapeutic Effects of Massive Administration of Lysozyme Chloride on Adult Acute or Chronic Sinusitis (1981)
  • Ohshima Ichiro ID: 9000022449185

    Articles in CiNii:1

    • An integral equation and its application to spiral antennas on semi-infinite dielectric materials (1998)
  • Ohshima Ichiro ID: 9000258180460

    Graduate School of Science and Technology Kumamoto University (2005 from CiNii)

    Articles in CiNii:1

    • Design and Fabrication of MOS Device Circuits with Reticle-Free Exposure Method (2005)
  • Ohshima Ichiro ID: 9000258451139

    熊本大 (2004 from CiNii)

    Articles in CiNii:1

    • Design and Fabrication of Semiconductor Integrated Circuit with Reticle-Free Exposure Method (2004)
  • Ohshima Ichiro ID: 9000401735700

    Articles in CiNii:1

    • Design and Fabrication of MOS Device Circuits with Reticle-Free Exposure Method (2005)
Page Top