Search Results1-20 of  75

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  • Ohshita Yoshio ID: 9000025069758

    Articles in CiNii:1

    • Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy (Special Issue : Solid State Devices and Materials (1)) (2012)
  • OHSHITA Yoshio ID: 9000001454033

    Toyota Technological Institute (2007 from CiNii)

    Articles in CiNii:3

    • Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel (2005)
    • Composition Control of Ni Silicide by Chemical Vapor Deposition Using Ni(PF_3)_4 and Si_3H_8 (2007)
    • Composition control of Ni-silicide by CVD using Ni(PF_3)_4 and Si_3H_8 (2005)
  • OHSHITA Yoshio ID: 9000107324213

    Toyota Technological Institute (2004 from CiNii)

    Articles in CiNii:1

    • Vapor Pressure of Hf and Si Precursors for Hf_xSi_<1-x>O_2 Deposition Evaluated by a Saturated Gas Technique (2004)
  • OHSHITA Yoshio ID: 9000107376879

    Toyota Technological Institute (2003 from CiNii)

    Articles in CiNii:1

    • Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf_<1-x> O_2 Chemical Vapor Deposition (2003)
  • OHSHITA Yoshio ID: 9000107389291

    Toyota Technological Institute (2004 from CiNii)

    Articles in CiNii:1

    • Ni Precursor for Chemical Vapor Deposition of NiSi (2004)
  • OHSHITA Yoshio ID: 9000107390403

    Toyota Technological Institute (2006 from CiNii)

    Articles in CiNii:1

    • Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy (2006)
  • OHSHITA Yoshio ID: 9000237721831

    Toyota Technological Institute (2012 from CiNii)

    Articles in CiNii:3

    • In situ Real-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms (2009)
    • Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy (2010)
    • Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells (2012)
  • Ohshita Yoshio ID: 9000004336317

    Toyota Technological Institute. (2016 from CiNii)

    Articles in CiNii:29

    • 4. CVD の化学工学 分子軌道法による CVD 素反応メカニズムの解析 (1996)
    • Applied physics and education : Contribution from the interdisciplinary field (2007)
    • Memory technologies for post-DRAM (2006)
  • Ohshita Yoshio ID: 9000046450171

    Articles in CiNii:1

    • Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy (2008)
  • Ohshita Yoshio ID: 9000052265799

    Articles in CiNii:1

    • Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells (2006)
  • Ohshita Yoshio ID: 9000059433451

    Articles in CiNii:1

    • Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy (2010)
  • Ohshita Yoshio ID: 9000061228951

    Articles in CiNii:1

    • Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy (2011)
  • Ohshita Yoshio ID: 9000064175138

    Articles in CiNii:1

    • Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells (2010)
  • Ohshita Yoshio ID: 9000065377495

    Articles in CiNii:1

    • Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source (2007)
  • Ohshita Yoshio ID: 9000068429331

    Articles in CiNii:1

    • Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells (2007)
  • Ohshita Yoshio ID: 9000069631091

    Articles in CiNii:1

    • Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing (2007)
  • Ohshita Yoshio ID: 9000075492772

    Articles in CiNii:1

    • Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy (2010)
  • Ohshita Yoshio ID: 9000079976348

    Articles in CiNii:1

    • Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy (2008)
  • Ohshita Yoshio ID: 9000252966098

    Fundamental Research Laboratories, NEC Corporation (1988 from CiNii)

    Articles in CiNii:1

    • Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering (1988)
  • Ohshita Yoshio ID: 9000258167689

    Toyota Technological Institute (2003 from CiNii)

    Articles in CiNii:1

    • Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition (2003)
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