Search Results21-40 of  75

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  • Ohshita Yoshio ID: 9000258184558

    Toyota Technological Institute (2005 from CiNii)

    Articles in CiNii:1

    • Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel (2005)
  • Ohshita Yoshio ID: 9000392704119

    Articles in CiNii:1

    • Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering (1988)
  • Ohshita Yoshio ID: 9000400158551

    Toyota Technological Institute, Japan (2018 from CiNii)

    Articles in CiNii:1

    • SELECTIVE EMITTER N-PERT SOLAR CELL USING NON MASS SEPARATION TYPE ION IMPLANTATION (2018)
  • Ohshita Yoshio ID: 9000401566826

    Articles in CiNii:1

    • In situReal-Time X-ray Reciprocal Space Mapping during InGaAs/GaAs Growth for Understanding Strain Relaxation Mechanisms (2009)
  • Ohshita Yoshio ID: 9000401568025

    Articles in CiNii:1

    • Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy (2010)
  • Ohshita Yoshio ID: 9000401572748

    Articles in CiNii:1

    • Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells (2012)
  • Ohshita Yoshio ID: 9000401608824

    Articles in CiNii:1

    • Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering (1988)
  • Ohshita Yoshio ID: 9000401723056

    Articles in CiNii:1

    • Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2Chemical Vapor Deposition (2003)
  • Ohshita Yoshio ID: 9000401744126

    Articles in CiNii:1

    • Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel (2005)
  • Ohshita Yoshio ID: 9000401756061

    Articles in CiNii:1

    • Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy (2006)
  • Ohshita Yoshio ID: 9000401783992

    Articles in CiNii:1

    • 2009-12-21 (2009)
  • Ohshita Yoshio ID: 9000401787637

    Articles in CiNii:1

    • Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth (2010)
  • Ohshita Yoshio ID: 9000401788343

    Articles in CiNii:1

    • Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory (2010)
  • Ohshita Yoshio ID: 9000401796731

    Articles in CiNii:1

    • Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence (2011)
  • Ohshita Yoshio ID: 9000401800111

    Articles in CiNii:1

    • Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films (2011)
  • Ohshita Yoshio ID: 9000401804161

    Articles in CiNii:1

    • Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001) (2012)
  • Ohshita Yoshio ID: 9000401804165

    Articles in CiNii:1

    • Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy (2012)
  • Ohshita Yoshio ID: 9000401804194

    Articles in CiNii:1

    • Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer (2012)
  • Ohshita Yoshio ID: 9000401805603

    Articles in CiNii:1

    • Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlO$_{x}$ (2012)
  • Ohshita Yoshio ID: 9000401810621

    Articles in CiNii:1

    • Improving Crystallinity of Thin Si Film for Low-Energy-Loss Micro-/Nano-Electromechanical Systems Devices by Metal-Induced Lateral Crystallization Using Biomineralized Ni Nanoparticles (2012)
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