Search Results1-20 of  32

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  • OHTSUKA Ken-ichi ID: 9000004908886

    Articles in CiNii:4

    • Gas Source Molecular Beam Epitaxy of II-VI Compound Semiconductors with Use of Group VI Hydrides and Group II Metal (1996)
    • SiC-MOSFET素子技術 (特集「新たな飛躍段階を迎えたパワーデバイス」) (2001)
    • 2kV耐圧SiC-MOSFET技術 (特集「パワーデバイス技術の最前線」) (2003)
  • OHTSUKA Ken-ichi ID: 9000005544104

    Department of Electrical and Computer Engineering. Nagoya Institute of Technology (1999 from CiNii)

    Articles in CiNii:5

    • Electrical Characterization of Au/p-ZnSe Structure (1996)
    • Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate (1999)
    • Photoluminescence Studies of Hydrogen-Passivated Al_<0.13>Ga_<0.87>As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition (1999)
  • OHTSUKA Ken-ichi ID: 9000020059401

    Central Research Laboratory, Mitsubishi Electric Corp. (1989 from CiNii)

    Articles in CiNii:1

    • Reactive ion etching of III-V compound semiconductors using mixture of ethane and hydrogen. (1989)
  • OHTSUKA Ken-ichi ID: 9000107352466

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Specular Surface Morphology of Aluminum-Implanted 4H-SiC(0001) by SiH_4-Added Ar Anneal (2004)
  • Ohtsuka Ken-ichi ID: 9000258169697

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Specular Surface Morphology of Aluminum-Implanted 4H-SiC(0001) by SiH4-Added Ar Anneal (2004)
  • Ohtsuka Ken-ichi ID: 9000401587955

    Articles in CiNii:1

    • Photoluminescence Measurements for Cd-Diffused InP p-n Junction (1981)
  • Ohtsuka Ken-ichi ID: 9000401590091

    Articles in CiNii:1

    • Diffusion Profiles of Cd in InP (1982)
  • Ohtsuka Ken-ichi ID: 9000401594777

    Articles in CiNii:1

    • A New, Simple Arrangement for Conoscopic Figures (1984)
  • Ohtsuka Ken-ichi ID: 9000401607421

    Articles in CiNii:1

    • Diffusion Mechanism of Cd in InP and InGaAs (1988)
  • Ohtsuka Ken-ichi ID: 9000401619747

    Articles in CiNii:1

    • Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors (1990)
  • Ohtsuka Ken-ichi ID: 9000401622623

    Articles in CiNii:1

    • Fe and Al Concentrations in High Resistivity InP Layer Grown by Low-Temperature Liquid Phase Epitaxy (1991)
  • Ohtsuka Ken-ichi ID: 9000401635745

    Articles in CiNii:1

    • Role of Carbon and Hydrogen in Reactive Ion Etching of InP by Gas Mixture of Ethane and Hydrogen (1993)
  • Ohtsuka Ken-ichi ID: 9000401638629

    Articles in CiNii:1

    • Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices (1993)
  • Ohtsuka Ken-ichi ID: 9000401641922

    Articles in CiNii:1

    • Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn andH2Se (1994)
  • Ohtsuka Ken-ichi ID: 9000401645842

    Articles in CiNii:1

    • Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy (1994)
  • Ohtsuka Ken-ichi ID: 9000401659379

    Articles in CiNii:1

    • Electrical Characterization of Au/p-ZnSe Structure (1996)
  • Ohtsuka Ken-ichi ID: 9000401723900

    Articles in CiNii:1

    • Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000\bar1) by SiH4-Added Ar Anneal (2004)
  • Ohtsuka Ken-ichi ID: 9000252762867

    Central Research Laboratory, Mitsubishi Electric Corporation (1990 from CiNii)

    Articles in CiNii:1

    • Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors (1990)
  • Ohtsuka Ken-ichi ID: 9000252950025

    Faculty of Engineering Science, Osaka University (1981 from CiNii)

    Articles in CiNii:1

    • Photoluminescence Measurements for Cd-Diffused InP p-n Junction (1981)
  • Ohtsuka Ken-ichi ID: 9000252954165

    Department of Physics, Gakushiuin University Mejiro (1984 from CiNii)

    Articles in CiNii:1

    • A New, Simple Arrangement for Conoscopic Figures (1984)
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