Search Results1-20 of  38

  • 1 / 2
  • Ohzone Yasuhiro ID: 9000016042114

    Articles in CiNii:1

    • [2π+2σ] Type Cycloaddition Reactions of Naphtho[b]cyclopropene with Trithiocarbonyl Compounds to Form 1,3-Dihydronaphtho[2,3-c]thiophene Derivatives (2004)
  • Ohzone Takashi ID: 9000024939311

    Articles in CiNii:1

    • Green electroluminescence from metal-oxide-semiconductor devices fabricated by spin coating of terbium organic compounds on silicon (2010)
  • Ohzone Takashi ID: 9000025041702

    Articles in CiNii:1

    • Green/red electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth organic compounds on silicon (2011)
  • Ohzone Takashi ID: 9000025118359

    Articles in CiNii:1

    • An Accurate and Computationally Efficient Method for Device Simulation with Scattering in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors (2006)
  • OHZONE M. ID: 9000000351664

    Ibaraki Tech. Col. (1999 from CiNii)

    Articles in CiNii:1

    • Preparation of iron oxide films by gel-coating (1999)
  • OHZONE Takashi ID: 9000001034912

    Department of Communication Engineering, Okayama Prefectural University (2003 from CiNii)

    Articles in CiNii:1

    • Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal-Oxide-Semiconductor Transistors (2003)
  • OHZONE Takashi ID: 9000002547754

    Dawn Enterprise Co., LTD. (2009 from CiNii)

    Articles in CiNii:19

    • Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors (2004)
    • Electroluminescence from MOS Capacitors with Si Implanted Oxide on p-type and n-type Si Substrate (2005)
    • A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs (2008)
  • OHZONE Takashi ID: 9000004812860

    Department of Electronics and Informatics, Toyama Prefectual University (1996 from CiNii)

    Articles in CiNii:1

    • Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90°and 45° (1996)
  • OHZONE Takashi ID: 9000004814991

    Department of Electronics and Informatics, Toyama Prefectural University (1997 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach (1997)
  • OHZONE Takashi ID: 9000005675196

    Department of Electronics and Informatics, Toyama Prefectural University (1997 from CiNii)

    Articles in CiNii:1

    • Photocarrier Generation Rate Model of Textured Silicon Solar Cells (1997)
  • OHZONE Yoshihiro ID: 9000018537513

    Sekisui Medical Inc. (2010 from CiNii)

    Articles in CiNii:1

    • In Vitro Evaluation of Cytochrome P450 and Glucuronidation Activities in Hepatocytes Isolated from Liver-Humanized Mice (2010)
  • OHZONE Yoshihiro ID: 9000257891349

    Sekisui Medical Inc. (2010 from CiNii)

    Articles in CiNii:1

    • In Vitro Evaluation of Cytochrome P450 and Glucuronidation Activities in Hepatocytes Isolated from Liver-Humanized Mice (2010)
  • Ohzone Takashi ID: 9000002437386

    Okayama Prefectural University (2007 from CiNii)

    Articles in CiNii:28

    • Propagating Path and Intensity Profile of Photons Emitted in Semiconductor Devices Regarding Reflection and Transmission Refracted (1999)
    • An Analytical Method of Propagating Path and Quantity Distribution of Photons Emitted in Semiconductor Devices (1997)
    • A Classification of Incident-Refracted Angle Characteristics ona Boundary with Complex Refractive Mediums (2001)
  • Ohzone Takashi ID: 9000258133696

    Department of Electronics and Informatics, Toyama Prefectural University, Kurokawa, Kosugi–machi, Toyama 939–03, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Photocarrier Generation Rate Model of Textured Silicon Solar Cells. (1997)
  • Ohzone Takashi ID: 9000258163476

    Department of Electronics and Informatics, Toyama Prefectural University, 5180 Kurokawa, Kosugi-machi, Toyama 939-0398, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates. (2002)
  • Ohzone Takashi ID: 9000258167606

    Department of Communication Engineering, Okayama Prefectural University (2003 from CiNii)

    Articles in CiNii:1

    • Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal-Oxide-Semiconductor Transistors (2003)
  • Ohzone Takashi ID: 9000258176601

    Department of Communication Engineering, Okayama Prefectural University (2004 from CiNii)

    Articles in CiNii:1

    • Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors (2004)
  • Ohzone Takashi ID: 9000401650048

    Articles in CiNii:1

    • Numerical Simulation of Silicon-on-Insulator Thin-Film Solar Cells (1995)
  • Ohzone Takashi ID: 9000401656034

    Articles in CiNii:1

    • Transport Equations for Homogeneous and Variable-Composition Semiconductor Devices at Low Temperatures (1996)
  • Ohzone Takashi ID: 9000401656214

    Articles in CiNii:1

    • The Influence of Magnetic Plugging on RF Plasma Density (1996)
  • 1 / 2
Page Top