Search Results1-20 of  43

  • 1 / 3
  • Oishi Toshiyuki ID: 9000241499451

    Articles in CiNii:1

    • Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation (Special Issue : Solid State Devices and Materials) (2013)
  • Oishi Toshiyuki ID: 9000242139382

    Articles in CiNii:1

    • Analysis of On-State Gate Current of AlGaN/GaN High-Electron-Mobility Transistor under Electrical and Thermal Stresses (2013)
  • OISHI Toshiyuki ID: 9000004745006

    Articles in CiNii:85

    • Annealed Ni/Pt/Au metal system as Schottky contacts on n-GaN and AlGaN/GaN (2003)
    • Zn Ion Implantation along the c Axis for Formation of Highly Resistive GaN Layers (2004)
    • Development of ultra-fine trench isolation using a simulation technique (1996)
  • OISHI Toshiyuki ID: 9000005559460

    Information Technology R&D Center, Mitsubishi Electric Corporation (2009 from CiNii)

    Articles in CiNii:7

    • Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs (1998)
    • Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current (2000)
    • First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation (2007)
  • OISHI Toshiyuki ID: 9000045943322

    Advanced Technology R & D Center, Mitsubishi Electric Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance (1998)
  • OISHI Toshiyuki ID: 9000045949468

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process (1996)
  • OISHI Toshiyuki ID: 9000107334127

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors (2001)
  • OISHI Toshiyuki ID: 9000107334236

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations (2001)
  • OISHI Toshiyuki ID: 9000107360832

    Advanced Technology Research and Development Center, Mitsubishi Electric Corporation (2008 from CiNii)

    Articles in CiNii:1

    • First Operation of AlGaN Channel High Electron Mobility Transistors (2008)
  • OISHI Toshiyuki ID: 9000107389475

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate (2004)
  • OISHI Toshiyuki ID: 9000248229749

    Department of Gastroenterology and Hepatology, Yamaguchi University Graduate School of Medicine (2011 from CiNii)

    Articles in CiNii:1

    • Splenectomy reduces fibrosis and preneoplastic lesions with increased thglycerides and essential fatty acids in rat liver cirrhosis induced by a choline-deficient L-amino acid-defined diet (2011)
  • Oishi Toshiyuki ID: 9000252988626

    Central Research Laboratory, Mitsubishi Electric Corporation (1993 from CiNii)

    Articles in CiNii:1

    • Effect of Ethane Addition to Argon in Etching of BiSrCaCuO Superconducting Thin Films (1993)
  • Oishi Toshiyuki ID: 9000258155262

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors. (2001)
  • Oishi Toshiyuki ID: 9000283158441

    Articles in CiNii:1

    • In-plane Orientation and Coincidence Site Lattice Relation of Bi2Sr2CaCu2Ox Thin Films Formed on Highly Mismatched (001) YAG Substrates. (1994)
  • Oishi Toshiyuki ID: 9000283158518

    Articles in CiNii:1

    • Reactive Ion Etching of BiSrCaCuO Superconducting Thin Films using Ethane and Oxygen. (1994)
  • Oishi Toshiyuki ID: 9000392733778

    Articles in CiNii:1

    • Effect of Ethane Addition to Argon in Etching of BiSrCaCuO Superconducting Thin Films (1993)
  • Oishi Toshiyuki ID: 9000401563834

    Articles in CiNii:1

    • First Operation of AlGaN Channel High Electron Mobility Transistors (2007)
  • Oishi Toshiyuki ID: 9000401565961

    Articles in CiNii:1

    • Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping (2009)
  • Oishi Toshiyuki ID: 9000401638801

    Articles in CiNii:1

    • Effect of Ethane Addition to Argon in Etching of BiSrCaCuO Superconducting Thin Films (1993)
  • Oishi Toshiyuki ID: 9000401645355

    Articles in CiNii:1

    • In-plane Orientation and Coincidence Site Lattice Relation ofBi2Sr2CaCu2OxThin Films Formed on Highly Mismatched (001) YAG Substrates (1994)
  • 1 / 3
Page Top