Search Results1-4 of  4

  • OKADOME Yoshizane ID: 9000001684095

    Faculty of Science and Technology, 21st-Century COE Program "Nano-Factory", Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005)
  • Okadome Yoshizane ID: 9000001534325

    Faculty of Science and Technology, Meijo University, 21^<st> century COE "Nano-Factory", Faculty of Science and Technology, Meijo University (2005 from CiNii)

    Articles in CiNii:6

    • Characterization of low dislocation density GaN grown on sapphire R-plane substrate (2005)
    • MOVPE of GaN on R-plane sapphire with high-growth rate (2005)
    • Characterization of low dislocation density GaN grown on sapphire R-plane substrate (2005)
  • Okadome Yoshizane ID: 9000258181514

    Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005)
  • Okadome Yoshizane ID: 9000401743742

    Articles in CiNii:1

    • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005)
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