Search Results1-19 of  19

  • OKAMOTO Dai ID: 9000403882527

    Articles in CiNii:1

    • Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures (2017)
  • OKAMOTO Dai ID: 9000006052651

    Advanced Electronic and Information System Engineering, Tsuyama National College of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Electrodeposited CuInS2-based Thin Film (2005)
  • OKAMOTO Dai ID: 9000006625270

    Graduate School of Materials Science, Nara Institute of Science and Technology (2009 from CiNii)

    Articles in CiNii:3

    • Charge-Pumping Measurements on 4H-SiC nMOSFETs and pMOSFETs (2007)
    • Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation (2008)
    • Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms (2009)
  • OKAMOTO Dai ID: 9000006945748

    Advanced Electronic and Information System Engineering Course, Tsuyama National College of Technology:(Present office)Nara Institute of Science and Technology (2007 from CiNii)

    Articles in CiNii:1

    • Preparation of AgInS2 thin films by sulfurization of Ag/In precursors for solar cell application (2007)
  • OKAMOTO Dai ID: 9000016376676

    Graduate School of Materials Science, Nara Institute of Science and Technology (2009 from CiNii)

    Articles in CiNii:1

    • Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures (2009)
  • OKAMOTO Dai ID: 9000283630557

    Japan Nuclear Fuel Limited (2009 from CiNii)

    Articles in CiNii:1

    • Analysis Study of High Wave Disasters in North Area of SADO Island in February of 2008 (2009)
  • OKAMOTO Dai ID: 9000310744864

    Fujimori kogyo, Co. LTD:International University of Health and Welfare (2014 from CiNii)

    Articles in CiNii:1

    • Study on pharmaceutical Package Notation and Ease-of-Opening (2014)
  • OKAMOTO Dai ID: 9000404504293

    University of Tsukuba, Faculty of Pure and Applied Sciences, Division of Applied Physics (2017 from CiNii)

    Articles in CiNii:1

    • Improvements in SiC MOSFET characteristics by the incorporation of foreign atoms (2017)
  • Okamoto Dai ID: 9000002326152

    Articles in CiNii:1

    • Relations between ;Life Style ; and the occurrence of injuries (2002)
  • Okamoto Dai ID: 9000002554438

    Articles in CiNii:10

    • ハンドボールにおけるアテネオリンピック優勝チームのゲーム分析 (報告書(体育研究所プロジェクト研究)) (2004)
    • ハンドボールにおけるゲーム分析--2005年世界選手権における男女日本チームの特徴 (2005)
    • How to measure the conductive velocity of the earth wave (2001)
  • Okamoto Dai ID: 9000345338090

    Graduate School of Pure and Applied Sciences, University of Tsukuba (2017 from CiNii)

    Articles in CiNii:1

    • Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test (2017)
  • Okamoto Dai ID: 9000401565790

    Articles in CiNii:1

    • 2009-01-23 (2009)
  • Okamoto Dai ID: 9000401978810

    Articles in CiNii:1

    • Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities (2019)
  • Okamoto Dai ID: 9000401980632

    Articles in CiNii:1

    • Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements (2017)
  • Okamoto Dai ID: 9000401981019

    Articles in CiNii:1

    • 2017-05-26 (2017)
  • Okamoto Dai ID: 9000402035643

    Articles in CiNii:1

    • Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method (2016)
  • Okamoto Dai ID: 9000402047595

    Articles in CiNii:1

    • Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions (2018)
  • Okamoto Dai ID: 9000402049474

    Articles in CiNii:1

    • Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors (2018)
  • Okamoto Dai ID: 9000402049493

    Articles in CiNii:1

    • Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors (2018)
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