Search Results1-20 of  61

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  • OKANO Haruo ID: 9000000509932

    ULSI Research Center, Toshiba Corporation (1993 from CiNii)

    Articles in CiNii:2

    • Low pressure chemical uapor deposition of tungsten (1992)
    • Molecular dynamic process simulator (1993)
  • OKANO Haruo ID: 9000001093625

    Nippon Koei Co., Ltd (2003 from CiNii)

    Articles in CiNii:1

    • Examination of drainage tunnel by NATM method : Kurashita Landslide drainage tunnels of Nagano Prefecture Japan (2003)
  • OKANO Haruo ID: 9000002886996

    Articles in CiNii:7

    • 紫外線励起シリコンドライエッチング (1984)
    • 半導体用エッチング技術--ドライエッチング技術を中心として (先端技術における表面処理) (1985)
    • High Rate Reactive Ion Etching(Special Issure on Semiconductors - Materials and Processing Technologies) (1985)
  • OKANO Haruo ID: 9000005543969

    New Materials Research Center, SANYO Electric Co., Ltd. (1997 from CiNii)

    Articles in CiNii:9

    • Characteristics of AlN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Band Surface Acoustic Wave Devices (1994)
    • Gate Oxide Breakdown Phenomena in Magnetron Plasma (1995)
    • A New High-Density Plasma Etching System Using A Dipole-Ring Magnet (1995)
  • OKANO Haruo ID: 9000005585066

    Applied Materials Japan Inc. (1997 from CiNii)

    Articles in CiNii:1

    • Highly Selective SiO_2 Etch Employing Inductively Coupled Hydro-Fluorocarbon Plasma Chemistry for Self Aligned Contact Etch (1997)
  • OKANO Haruo ID: 9000005780405

    Research and Development Center (1981 from CiNii)

    Articles in CiNii:1

    • Cl_2/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma (1981)
  • OKANO Haruo ID: 9000020751185

    Articles in CiNii:1

    • Microfabrication technologies for high aspect ratio processes. (1987)
  • OKANO Haruo ID: 9000253323005

    Toshiba Research and Development Center, Toshiba VLSI Research Center. (1984 from CiNii)

    Articles in CiNii:1

    • UV Light-Excited Silicon Dry Etching (1984)
  • OKANO Haruo ID: 9000253324188

    ULSI Research Center, Toshiba Corp. (1988 from CiNii)

    Articles in CiNii:1

    • Liquid Phase CVD Technology of Insulator Film (1988)
  • OKANO Haruo ID: 9000253325471

    ULSI Research Center, Toshiba Corp. (1992 from CiNii)

    Articles in CiNii:1

    • Low pressure chemical vapor deposition of tungsten (1992)
  • OKANO Haruo ID: 9000253325760

    ULSI Research Center, Toshiba Corporation. (1993 from CiNii)

    Articles in CiNii:1

    • Molecular dynamic process simulator (1993)
  • OKANO Haruo ID: 9000253687574

    Toshiba R & D Center, VLSI Research Center (1984 from CiNii)

    Articles in CiNii:1

    • Application of photo Chemical Reaction to Semi-Conductor Process (1984)
  • OKANO Haruo ID: 9000254454076

    Nippon Koei Co., Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Examination of drainage tunnel by NATM method:Kurashita Landslide drainage tunnels of Nagano Prefecture Japan (2003)
  • Okano Haruo ID: 9000252756736

    Toshiba Research and Development Center (1981 from CiNii)

    Articles in CiNii:1

    • High-Rate Reactive Ion Etching of SiO<SUB>2</SUB> Using a Magnetron Discharge (1981)
  • Okano Haruo ID: 9000252758657

    Toshiba VLSI Research Center, Toshiba Corp. (1985 from CiNii)

    Articles in CiNii:1

    • Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl<SUB>2</SUB> Atmosphere (1985)
  • Okano Haruo ID: 9000252765035

    ULSI Research Center, Toshiba Corp. (1992 from CiNii)

    Articles in CiNii:1

    • SiO<SUB>2</SUB> Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas (1992)
  • Okano Haruo ID: 9000252949498

    Articles in CiNii:1

    • Si Etch Rate and Etch Yield with Ar<SUP>+</SUP>/Cl<SUB>2</SUB> System (1981)
  • Okano Haruo ID: 9000252949913

    Research and Development Center, Toshiba Corporation (1981 from CiNii)

    Articles in CiNii:1

    • Cl<SUB>2</SUB>/Ar Plasma Etching of a Contaminated Layer on Si Induced by Fluorocarbon Gas Plasma (1981)
  • Okano Haruo ID: 9000252951328

    Toshiba Research and Development Center Toshiba Corporation (1982 from CiNii)

    Articles in CiNii:1

    • Reactive Ion Beam Etching of SiO<SUB>2</SUB> and Poly-Si Employing C<SUB>2</SUB>F<SUB>6</SUB>, SiF<SUB>4</SUB> and BF<SUB>3</SUB> Gases (1982)
  • Okano Haruo ID: 9000252954507

    Toshiba Research and Development Center (1984 from CiNii)

    Articles in CiNii:1

    • Etching Characteristics of n<SUP>+</SUP> Poly-Si and Al Employing a Magnetron Plasma (1984)
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