Search Results1-20 of  21

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  • OKIGAWA Mitsuru ID: 9000001252946

    Institute of Fluid Science, Tohoku Universit (2004 from CiNii)

    Articles in CiNii:2

    • Drastically Reduced Dark Current by Pulse-Time-Modulated Plasma and Gas Optimization for Sensitive CCD Image Sensor (2004)
    • 固体撮像素子のための低損傷プラズマプロセス (特集2 CCDとCMOSセンサ) (2004)
  • OKIGAWA Mitsuru ID: 9000001260692

    CCD Business Unit, Semiconductor Company, SANYO Electric Co., Ltd. (2006 from CiNii)

    Articles in CiNii:3

    • A 1/4.5 type 1M-pixels FT-CCD camera module for mobile phone (2004)
    • Camera System Built in Mobile Phone ; Function of CCD/CMOS Image Sensor and Image Data Processing (2006)
    • モザイクカラ-フィルタを用いたフレ-ムトランスファ方式CCDイメ-ジセンサ (オプトデバイス特集) (1991)
  • OKIGAWA Mitsuru ID: 9000005463597

    Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:2

    • Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies (1998)
    • UHF-Band ECR Plasma (1997)
  • OKIGAWA Mitsuru ID: 9000005723516

    Association of Super-Advanced Electronics Technologies (ASET):(Present address)System LSI Division CCD Development Department, SANYO Electric Co., Ltd. Semiconductor Company (2002 from CiNii)

    Articles in CiNii:2

    • Plasma-Wall Interactions In Dual Freguency Narrow-Gap Reactive Ion Etching System (1998)
    • CF and CF_2 Radical Densities in 13.56-MHz CHF_3/Ar Inductively Coupled Plasma (2002)
  • OKIGAWA Mitsuru ID: 9000006483940

    Sanyo Electric Co., Ltd. (2006 from CiNii)

    Articles in CiNii:4

    • Effects of Thermal Annealing for Restoration of UV Irradiation Damage during Plasma Etching Processes (2006)
    • Control of UV Radiation Damages for the High Sensitive CCD Image Sensor (2004)
    • Effects of CF_3I Plasma for Reducing UV Irradiation Damage in Dielectric Film Etching Processes (2006)
  • OKIGAWA Mitsuru ID: 9000107306857

    Institute of Fluid Science, Tohoku University (2003 from CiNii)

    Articles in CiNii:1

    • Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma (2003)
  • OKIGAWA Mitsuru ID: 9000107345983

    Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:1

    • Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing (1998)
  • OKIGAWA Mitsuru ID: 9000107346102

    Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:1

    • Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma (1998)
  • OKIGAWA Mitsuru ID: 9000257778861

    CCD Business Unit, Semiconductor Company, SANYO Electric Co., Ltd. (2006 from CiNii)

    Articles in CiNii:1

    • Camera System Built in Mobile Phone; Function of CCD/CMOS Image Sensor and Image Data Processing (2006)
  • OKIGAWA Mitsuru ID: 9000283413866

    <I>Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies</I> (1998 from CiNii)

    Articles in CiNii:1

    • Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies (1998)
  • Okigawa Mitsuru ID: 9000258141299

    Plasma Technology Laboratory, Association of Super–Advanced Electronics Technologies (ASET), 292 Yoshida–cho, Totsuka, Yokohama, Kanagawa 244–0817, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma. (1998)
  • Okigawa Mitsuru ID: 9000258141558

    Plasma Technology Laboratory, Association of Super–advanced Electronics Technologies (ASET), 292 Yoshida–cho, Totsuka–ku, Yokohama, Kanagawa 244, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing. (1998)
  • Okigawa Mitsuru ID: 9000258155035

    Sanyo Electric Co., Ltd., Semiconductor Company, System LSI Division, CCD Development, 180 Ohmori, Anpachi-cho, Anpachi-gun, Gifu 503-0195, Japan (2001 from CiNii)

    Articles in CiNii:1

    • On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes. (2001)
  • Okigawa Mitsuru ID: 9000258158451

    Association of Super-Advanced Electronics Technologies (ASET), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan (2002 from CiNii)

    Articles in CiNii:1

    • CF and CF2 Radical Densities in 13.56-MHz CHF3/Ar Inductively Coupled Plasma. (2002)
  • Okigawa Mitsuru ID: 9000258166489

    Institute of Fluid Science, Tohoku University|CCD Development Department, Semiconductor Company Hyper Device Division, Sanyo Electric Co., Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge-Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma (2003)
  • Okigawa Mitsuru ID: 9000401671819

    Articles in CiNii:1

    • Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing (1998)
  • Okigawa Mitsuru ID: 9000401671825

    Articles in CiNii:1

    • Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma (1998)
  • Okigawa Mitsuru ID: 9000401675899

    Articles in CiNii:1

    • Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System (1998)
  • Okigawa Mitsuru ID: 9000401703034

    Articles in CiNii:1

    • On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes (2001)
  • Okigawa Mitsuru ID: 9000401706916

    Articles in CiNii:1

    • CF and CF2Radical Densities in 13.56-MHz CHF3/Ar Inductively Coupled Plasma (2002)
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