Search Results1-16 of  16

  • OKUDA Soichiro ID: 9000004778277

    Mitsubishi Electric Corporation (2005 from CiNii)

    Articles in CiNii:20

    • Fabrication of Electron Source for FED Using CNT Grown by CVD (2004)
    • Information Display (2004)
    • Fabrication of Electron Source for FED Using CNT Grown by CVD (2004)
  • OKUDA Soichiro ID: 9000004816431

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:6

    • Development of Electron Gun for High Brightness CRT (2003)
    • Simulation Designing and Experiment of Low Aberration Lens Systems for Color Display Tubes (1998)
    • Development of Electron Gun for High Brightness CRT(CRT Technology)(<Special Issue>Electronic Displays) (2003)
  • OKUDA Soichiro ID: 9000005529925

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2002 from CiNii)

    Articles in CiNii:3

    • Electron-Beam-Induced Deposition of Pt for Field Emitter Arrays (1996)
    • Pulsed Laser Deposition of Diamond-Like Carbon Films on Gated Si Field Emitter Arrays for Improved Electron Emission (1999)
    • Prototyping of Field Emitter Array Using Focused Ion and Electron Beams (2002)
  • OKUDA Soichiro ID: 9000006453168

    Advanced Technology R&D Center, Mitsubishi Electric Corp. (2001 from CiNii)

    Articles in CiNii:1

    • Macropore Formation in Anodized p-Type Silicon (2001)
  • OKUDA Soichiro ID: 9000014228514

    Tohoku University (2009 from CiNii)

    Articles in CiNii:3

    • Study on Operation of Three-Phase Superconducting Fault Current Limiter (2008)
    • Study on Three-phase Superconducting Fault Current Limiter (2009)
    • Fundamental Characteristics of 3-phase Superconducting Fault Current Limiter (2009)
  • OKUDA Soichiro ID: 9000107378180

    Mitsubishi Electric Corp. (2003 from CiNii)

    Articles in CiNii:1

    • Mechanism of Macropore Formation in Anodized p-Type Silicon (2003)
  • OKUDA Soichiro ID: 9000107389835

    Advanced Technology R&D Center, Mitsubishi Electric Corp. (2003 from CiNii)

    Articles in CiNii:1

    • Effect of Solvent in Anodic Solution on Photoluminescence in Anodized p-Type Porous Silicon (2003)
  • OKUDA Soichiro ID: 9000257778736

    三菱電機(株)先端技術総合研究所 (2004 from CiNii)

    Articles in CiNii:1

    • 6-5 Information Display (2004)
  • Okuda Soichiro ID: 9000258162414

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1 Tsukaguchi-Honmachi 8, Amagasaki, Hyogo 661-8661, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Prototyping of Field Emitter Array Using Focused Ion and Electron Beams. (2002)
  • Okuda Soichiro ID: 9000258167944

    Mitsubishi Electric Corp. (2003 from CiNii)

    Articles in CiNii:1

    • Mechanism of Macropore Formation in Anodized p-Type Silicon (2003)
  • Okuda Soichiro ID: 9000401659925

    Articles in CiNii:1

    • Electron-Beam-Induced Deposition of Pt for Field Emitter Arrays (1996)
  • Okuda Soichiro ID: 9000401684739

    Articles in CiNii:1

    • Pulsed Laser Deposition of Diamond-Like Carbon Films on Gated Si Field Emitter Arrays for Improved Electron Emission (1999)
  • Okuda Soichiro ID: 9000401700013

    Articles in CiNii:1

    • Macropore Formation in Anodized p-Type Silicon (2001)
  • Okuda Soichiro ID: 9000401708077

    Articles in CiNii:1

    • Prototyping of Field Emitter Array Using Focused Ion and Electron Beams (2002)
  • Okuda Soichiro ID: 9000401716498

    Articles in CiNii:1

    • Mechanism of Macropore Formation in Anodized p-Type Silicon (2003)
  • Okuda Soichiro ID: 9000401720240

    Articles in CiNii:1

    • Effect of Solvent in Anodic Solution on Photoluminescence in Anodized p-Type Porous Silicon (2003)
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