Search Results1-20 of  29

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  • OKUMURA Katsuya ID: 9000000514324

    Department of Applied Chemistry and Biotechnology, Faculty of Engineering, Fukui University (1994 from CiNii)

    Articles in CiNii:1

    • Syntheses of Arylated ρ-Benzoquinones (1994)
  • OKUMURA Katsuya ID: 9000001505899

    Process & Manufacturing Engineering Center, Semiconductor Company Toshiba Corporation (2001 from CiNii)

    Articles in CiNii:1

    • New Charge Control Technology by Stencil Mask Ion Implantation (2001)
  • OKUMURA Katsuya ID: 9000001667802

    東京大学 (2006 from CiNii)

    Articles in CiNii:4

    • A cell library development methodology for character projection (2006)
    • A cell library development methodology for character projection (2005)
    • A cell library development methodology for character projection (2005)
  • OKUMURA Katsuya ID: 9000001722572

    TOSHIBA at IBM Semiconductor Research & Development Center (1995 from CiNii)

    Articles in CiNii:1

    • Sequential Thermal CVD Process Using Fast Thermal Processor(FTP) (1995)
  • OKUMURA Katsuya ID: 9000002165141

    Process Engineering Lab., Toshiba Corp. Semiconductor company (1999 from CiNii)

    Articles in CiNii:1

    • Low Pressure High Speed Spin Dryer for Realizing Water Mark Free Surface (1999)
  • OKUMURA Katsuya ID: 9000004777437

    Research Center for Advanced Science and Technology, The University of Tokyo (2002 from CiNii)

    Articles in CiNii:6

    • Silicon Interposer Technology for High-density Package (2000)
    • Damascene Metal Gate Transistor Technology : Reduction of threshold voltage deviation and salicide integration to damascene gate process (2000)
    • Damascene Metal Gate Transistor Technology : Reduction of threshold voltage deviation and salicide integration to damascene gate process (2000)
  • OKUMURA Katsuya ID: 9000005598532

    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation (1999 from CiNii)

    Articles in CiNii:1

    • Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100nm Resolution (1999)
  • OKUMURA Katsuya ID: 9000005746030

    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.:(Present)University of Tokyo, Research Center for Advanced Science and Technology (2002 from CiNii)

    Articles in CiNii:6

    • Novel PZT Crystallization Technique by Using Flash Lamp for FeRAM Embedded LSIs and 1Tr FeRAM Devices (2001)
    • Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs (1998)
    • (Ba, Sr)TiO_3 Stacked Capacitor Technology for 0.13μm-DRAMs and Beyond (1999)
  • OKUMURA Katsuya ID: 9000005845361

    Process & Manufacturing Engineering Center, Toshiba Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Performances of Novel Nozzle-Scan Coating Method (2000)
  • OKUMURA Katsuya ID: 9000006072284

    the University of Tokyo (2006 from CiNii)

    Articles in CiNii:1

    • Cell Library Development Methodology for Throughput Enhancement of Character Projection Equipment (2006)
  • OKUMURA Katsuya ID: 9000006455246

    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation (2002 from CiNii)

    Articles in CiNii:1

    • Accuracy of Overlay Metrology with Nonp-enetrating and Negative-Charging Electron Beam of the Scanning Electron Microscope (2002)
  • OKUMURA Katsuya ID: 9000022202563

    Articles in CiNii:1

    • Special Issue on Key of High Yield of ULSI. Yield Improvement for VLSI Manufacturing. (1992)
  • OKUMURA Katsuya ID: 9000253648264

    Toshiba Corp. (1993 from CiNii)

    Articles in CiNii:1

    • Evaluation of Semiconductor Surfaces by Radioluminography. (1993)
  • Okumura Katsuya ID: 9000049723761

    Articles in CiNii:1

    • High-Performance Decomposition and Fixation of Dry Etching Exhaust Perfluoro-Compound Gases and Study of Their Mechanism (2011)
  • Okumura Katsuya ID: 9000252960127

    Toshiba Corporation, Integrated Circuits Division (1987 from CiNii)

    Articles in CiNii:1

    • Effect of the Electron-Irradiation-Induced-Contamination of the Etching Process of a Photoresist (1987)
  • Okumura Katsuya ID: 9000258146575

    ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita–cho, Isogo–ku, Yokohama 235–8522, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution. (1999)
  • Okumura Katsuya ID: 9000258149780

    Process & Manufacturing Engineering Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Performances of Novel Nozzle-Scan Coating Method. (2000)
  • Okumura Katsuya ID: 9000258160835

    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (2002 from CiNii)

    Articles in CiNii:1

    • 10-15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing. (2002)
  • Okumura Katsuya ID: 9000258161005

    Research Center for Advanced Science and Technology, The University of Tokyo (2002 from CiNii)

    Articles in CiNii:1

    • Novel Pb(Ti,Zr)O3(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices. (2002)
  • Okumura Katsuya ID: 9000258391739

    RCAST, The University of Tokyo (2003 from CiNii)

    Articles in CiNii:1

    • Low Contact Force Probing on Cu Electrodes (2003)
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