Search Results1-18 of  18

  • OMAE Kunimichi ID: 9000001058576

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Novel Liquid Phase Epitaxy(LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method (2003)
  • OMAE Kunimichi ID: 9000003641626

    Dept. of Electron. Sci. and Eng., Kyoto Univ. (2001 from CiNii)

    Articles in CiNii:1

    • Emission Mechanism in InGaN-Based Light Emitting Devices (2001)
  • OMAE Kunimichi ID: 9000016376143

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2009 from CiNii)

    Articles in CiNii:2

    • Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection (2008)
    • Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate (2009)
  • OMAE Kunimichi ID: 9000016651820

    Nitride Semiconductor Research Laboratory, Nichia Corporation (2009 from CiNii)

    Articles in CiNii:1

    • Room-Temperature Continuous-Wave Lasing of A Violet GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection (2009)
  • OMAE Kunimichi ID: 9000107323110

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System (2003)
  • OMAE Kunimichi ID: 9000107327710

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique (2003)
  • OMAE Kunimichi ID: 9000107338722

    Department of Electrical Engineering, Osaka University (2004 from CiNii)

    Articles in CiNii:1

    • Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE) (2004)
  • Omae Kunimichi ID: 9000004339282

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Transparent Large Size GaN Single Crystal with Low Dislocations Using Alkali Metal-based Flux.(<Special issue>The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides) (2003)
  • Omae Kunimichi ID: 9000258164849

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy(LPE) Technique. (2003)
  • Omae Kunimichi ID: 9000258164932

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique (2003)
  • Omae Kunimichi ID: 9000258168140

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System (2003)
  • Omae Kunimichi ID: 9000401565540

    Articles in CiNii:1

    • Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection (2008)
  • Omae Kunimichi ID: 9000401566247

    Articles in CiNii:1

    • Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate (2009)
  • Omae Kunimichi ID: 9000401722423

    Articles in CiNii:1

    • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique (2003)
  • Omae Kunimichi ID: 9000401722754

    Articles in CiNii:1

    • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique (2003)
  • Omae Kunimichi ID: 9000401723312

    Articles in CiNii:1

    • Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System (2003)
  • Omae Kunimichi ID: 9000401723565

    Articles in CiNii:1

    • Novel Liquid Phase Epitaxy (LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method (2003)
  • Omae Kunimichi ID: 9000401732945

    Articles in CiNii:1

    • Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE) (2004)
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