Search Results1-20 of  128

  • Omura Yasuhisa ID: 9000024976887

    Articles in CiNii:1

    • Low-temperature behaviors of phonon-limited electron mobility of sub-10-nm-thick silicon-on-insulator metal-oxide-semiconductor field-effect transistor with (001) and (111) Si surface channels (2009)
  • Omura Yasuhisa ID: 9000024979565

    Articles in CiNii:1

    • Impact of dot-size and dot-location variations on capacitance-voltage characteristics and flat-band voltage shift of quantum-dot non-volatile memory cells (2011)
  • Omura Yasuhisa ID: 9000025012458

    Articles in CiNii:1

    • Empirical models of phonon-limited electron mobility for ultrathin-body single-gate and double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors with (001) or (111)Si surface channel (2007)
  • Omura Yasuhisa ID: 9000025016762

    Articles in CiNii:1

    • Impact of local high-k insulator on drivability and standby power of gate-all-around silicon-on-insulator metal-oxide-semiconductor field-effect transistor (2010)
  • Omura Yasuhisa ID: 9000025031038

    Articles in CiNii:1

    • Cross-current silicon-on-insulator metal-oxide-semiconductor field-effect transistor and application to multiple voltage reference circuits (Special issue: Solid state devices and materials) (2009)
  • Omura Yasuhisa ID: 9000025096317

    Articles in CiNii:1

    • Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor (Special Issue: Solid State Devices & Materials) (2006)
  • Omura Yasuhisa ID: 9000025121780

    Articles in CiNii:1

    • Design feasibility of high-performance Si wire gate-all-around metal-oxide-semiconductor field-effect transistor in sub-30-nm-channel regime (2011)
  • OMURA YASUHISA ID: 9000005274269

    Department of Applied Chemistry, Faculty of Engineering, Hiroshima University (1973 from CiNii)

    Articles in CiNii:1

    • Spectrophotometric Determination of Zirconium with Bromopyrogallol Red and Zephiramine (1973)
  • OMURA YASUHISA ID: 9000392668818

    Articles in CiNii:1

    • Spectrophotometric Determination of Zirconium with Bromopyrogallol Red and Zephiramine (1973)
  • OMURA Yasuhisa ID: 9000001506419

    High-Technology Research Center and Faculty of Engineering, Kansai University (2001 from CiNii)

    Articles in CiNii:1

    • Significant Impact of Transport Noise Enhancement in Scaled-Down MOSFET's (2001)
  • OMURA Yasuhisa ID: 9000001716693

    Dept. of Electronics, Faculty of Engineering, Kansai University (1997 from CiNii)

    Articles in CiNii:1

    • A New Basic Element for Neural Logic Circuits (1997)
  • OMURA Yasuhisa ID: 9000001719228

    High-Technology Research Center (2000 from CiNii)

    Articles in CiNii:1

    • Quantitative Evaluation of Quantum Mechanical Influence on Flat-Band Capacitance of Poly-Si/SiO_2/Si Substrate System and the Impact of Oxide Charge Density (2000)
  • OMURA Yasuhisa ID: 9000001720387

    NTT LSI Laboratories (1996 from CiNii)

    Articles in CiNii:1

    • Enhancement and Suppression of Band-to-Band Tunneling Current in Ultra-Thin nMOSFETs/SIMOX : Influence of Superficial Si Layer Thickness and It's Future Prospect (1996)
  • OMURA Yasuhisa ID: 9000001721990

    NTT LSI Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Two-Dimensionally Confined Carrier Injection Phenomena in Sub-10-nm-Thick SOI Insulated-Gate pn-Junction Devices (1995)
  • OMURA Yasuhisa ID: 9000002169834

    Graduate School of Eng, Kansai University (2005 from CiNii)

    Articles in CiNii:1

    • Performance Investigation of Field-Emission Device Surrounded by High-k Dielectric (FESH) (2005)
  • OMURA Yasuhisa ID: 9000002170388

    Dept. of Electronics, Kansai University (2005 from CiNii)

    Articles in CiNii:1

    • Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate SOI MOSFET's (2005)
  • OMURA Yasuhisa ID: 9000002173209

    Graduate School of Sci. & Eng, Kansai University (2007 from CiNii)

    Articles in CiNii:2

    • Empirical Model of Phonon-Limited Electron Mobility for Ultra-Thin Body SOI MOSFET (2006)
    • Behavior of Low-Temperature Phonon-Limited Electron Mobility of Double-Gate Field-Effect Transistor with (111) Si Surface Channel (2007)
  • OMURA Yasuhisa ID: 9000002176286

    ORDIST, Grad. School of Sci. & Eng., Kansai University (2007 from CiNii)

    Articles in CiNii:1

    • Cross-Current SOI MOSFET Model and Important Aspects of CMOS Operations (2007)
  • OMURA Yasuhisa ID: 9000002347803

    Electronics, High-Technology Research Center and Faculty of Engineering, Kansai University (2008 from CiNii)

    Articles in CiNii:15

    • A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1μm Channel Regime (2001)
    • Study on Silicon Optical Switch with T-Shape SiO_2 Waveguide as an Optical Control Gate (2001)
    • Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime (2000)
  • OMURA Yasuhisa ID: 9000002521135

    Graduate School of Engineering, Kansai University:ORDIST, Kansai University (2014 from CiNii)

    Articles in CiNii:21

    • Experimental and Simulation-Based Consideration on Relationship Between Current-Stress Conditions and SILC Characteristics (2000)
    • Sub 100nm SOI MOSFETの横方向不純物拡散制御の重要性とプロセス指針に関する研究 (産学連携への掛け橋) (2002)
    • Post-Breakdown Conduction Mechanisms of Thin Oxide Films and Their Aspects (2001)
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