Search Results21-40 of  128

  • OMURA Yasuhisa ID: 9000002641812

    関西大学システム理工学部 (2012 from CiNii)

    Articles in CiNii:33

    • A Study on Material Measurement Methods Using FDTD Simulation Techniques : Measurements of Surface Resistance of Metals and Dielectric Plates Including Semiconductor Wafer in Millimeter-wave Range (2007)
    • A study on method of semiconductor materials measurement supported by accurate FDTD EM-field simulation in millimeter-wave range (安全・安心・快適な社会構築のための知能・感性・情報通信技術の応用プロジェクト) (2007)
    • One-dimensional fractal broadband antenna for demand expansion in RFID systems (安全・安心・快適な社会構築のための知能・感性・情報通信技術の応用プロジェクト) (2007)
  • OMURA Yasuhisa ID: 9000003641618

    Graduate School of Science and Engineering, Kansai University (2011 from CiNii)

    Articles in CiNii:2

    • Quantum Mechanical Transport Phenomena of Ultra-Thin Silicon-on-Insulator Devices (2001)
    • Temperature Dependence of Drain Currents of Thin-Film Transistor with Very Thin SiN_x Film Formed at Source and Drain Region (2011)
  • OMURA Yasuhisa ID: 9000004779711

    High-Technology Research Center, Kansai University (2001 from CiNii)

    Articles in CiNii:3

    • 急速酸化技術による極薄シリコン酸化膜の形成機構の検討 (1999)
    • Influence of oxygen dilution on the oxide growth mechanisms in rapid thermal oxidation of silicon (1999)
    • Study on Non-Stationary Process in Silicon Oxide Film Growth by Simulations (2001)
  • OMURA Yasuhisa ID: 9000004814956

    NTT System Electronics Laboratories (1997 from CiNii)

    Articles in CiNii:1

    • Features of Ultimately Miniaturized MOSFETs/SOI: A New Stage in Device Physics and Design Concepts (1997)
  • OMURA Yasuhisa ID: 9000004826101

    Department of Electronics, Kansai University (2002 from CiNii)

    Articles in CiNii:1

    • Simulations of High-Frequency Thermal Noise in Silicon-on-Insulator MOSFETs Using Distributed-Transmission-Line Model (2002)
  • OMURA Yasuhisa ID: 9000005569228

    NTT LSI Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • A Simple Model For Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen (1995)
  • OMURA Yasuhisa ID: 9000005607612

    High-Technology Research Center and Faculty of Engineering, Kansai University (2000 from CiNii)

    Articles in CiNii:1

    • An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film (2000)
  • OMURA Yasuhisa ID: 9000005677502

    NTT System Electronics Laboratories (1997 from CiNii)

    Articles in CiNii:1

    • Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor by Separation by IMplanted OXygen (nMOSFET/SIMOX) (1997)
  • OMURA Yasuhisa ID: 9000005734645

    NTT LSI Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX (Separation by IMplanted OXygen) Substrates (1995)
  • OMURA Yasuhisa ID: 9000005890550

    High-Technology Research Center and Faculty of Engineering, Kansai University (2000 from CiNii)

    Articles in CiNii:1

    • Analysis of Thin Oxide Growth Mechanisms in Partial-Pressure Rapid-Thermal Oxidation of Silicon (2000)
  • OMURA Yasuhisa ID: 9000005890851

    High-Technology Research Center, Kansai University (2000 from CiNii)

    Articles in CiNii:1

    • Analysis of Interface Microdtructure Evolution in Separation by IMplanted Oxygen (SIMOX) Wafers (2000)
  • OMURA Yasuhisa ID: 9000005902331

    High-Technology Research Center and Department of Electronics, Faculty of Engineering, Kansai University (2000 from CiNii)

    Articles in CiNii:1

    • Two-Dimensional Quantization Effect on Indirect Tunneling in an Insulated-Gate Lateral pn-Junction Structure with a Thin Silicon Layer (2000)
  • OMURA Yasuhisa ID: 9000005904095

    Kansai University and High-Technology Research Center (2000 from CiNii)

    Articles in CiNii:1

    • Comparison Between High-and Low-Dose Separation by Implanted Oxygen MOS Transistors for Low-Power Radio-Frequency Applications (2000)
  • OMURA Yasuhisa ID: 9000006297987

    Senior Member, IEEE (2008 from CiNii)

    Articles in CiNii:3

    • Feasibility Study on Self-Collimated Light-Focusing Device Using 2-D Photonic Crystal with a Parallelogram Lattice (2004)
    • Theoretical Consideration on Influences of Cavity or Pillar Shape on Band Structures of Silicon-Based Photonic Crystals (2006)
    • Study on Self-Collimated Light-Focusing Device Using the 2-D Photonic Crystal With a Parallelogram Lattice (2008)
  • OMURA Yasuhisa ID: 9000006618617

    Faculty of Science and Engineering, Kansai University (2008 from CiNii)

    Articles in CiNii:1

    • Simulation Techniques for Multiple-gate FinFET (2008)
  • OMURA Yasuhisa ID: 9000006626826

    High-Technology Research Center, Kansai University (2007 from CiNii)

    Articles in CiNii:1

    • Compact Equivalent-Circuit Model for Snap-Back Phenomena in Ultra-Thin SOI MOSFET's and Practical Guideline for ESD-Protection Device Design (2007)
  • OMURA Yasuhisa ID: 9000006949945

    ORDIST:Graduate School Japan of Engineering2, Kansai University (2008 from CiNii)

    Articles in CiNii:1

    • Design Feasibility and Prospect of High-Performance Sub-50-nm-Channel Silicon-on-Insulator Single-Gate SOI MOSFET(ELECTRICAL AND ELECTRONIC ENGINEERING,50th anniversary edition) (2008)
  • OMURA Yasuhisa ID: 9000006949949

    Grad. School of Eng., Kansai University (2008 from CiNii)

    Articles in CiNii:1

    • The Potential and the Drawbacks of Underlap Single-Gate Ultrathin SOI MOSFET(ELECTRICAL AND ELECTRONIC ENGINEERING,50th anniversary edition) (2008)
  • OMURA Yasuhisa ID: 9000006949952

    Graduate School of Science and Eng., Kansai University (2008 from CiNii)

    Articles in CiNii:1

    • Experimental Investigation of Obstacle-Avoiding Mobile Robots without Image Processing(ELECTRICAL AND ELECTRONIC ENGINEERING,50th anniversary edition) (2008)
  • OMURA Yasuhisa ID: 9000015641342

    High-Technology Research Center and Faculty of Engineering, Kansai University (2003 from CiNii)

    Articles in CiNii:1

    • Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective (2003)
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