Search Results41-60 of  128

  • OMURA Yasuhisa ID: 9000018316123

    Graduate School of Engineering, Kansai University:ORDIST, Kansai University (2010 from CiNii)

    Articles in CiNii:8

    • Feasibility Study of Si-Probe μ-Pseudo-MOS Technique for SOI-Layer Characterization (2006)
    • Feasibility Study of Si-Probe μ-Pseudo-MOS Technique for SOI-Layer Characterization (2006)
    • Feasibility Study of Si-Probe μ-Pseudo-MOS Technique for SOI-Layer Characterization (2006)
  • OMURA Yasuhisa ID: 9000107324228

    High-Technology Research Center, Kansai University (2004 from CiNii)

    Articles in CiNii:1

    • Physics-Based Analytical Model of Quantum-Mechanical Electron Wave Function Penetration into Thin Dielectric Films and Capacitance Evaluation (2004)
  • OMURA Yasuhisa ID: 9000107334849

    High-Technology Research Center and Department of Electronics, Faculty of Engineering, Kansai University (2001 from CiNii)

    Articles in CiNii:1

    • Quantum Mechanical Influence on Flat-Band Capacitance in Metal-Oxide-Semiconductor Structures with a Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation (2001)
  • OMURA Yasuhisa ID: 9000107346469

    High-Technology Research Center (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Silicon Addition on Electrical Properties of SrBi_2Ta_2O_9 Thin Films (2004)
  • Omura Yasuhisa ID: 9000002347845

    Articles in CiNii:1

    • A New Basic Element for Neural Logic Circuits : Proposal and Simulations (2000)
  • Omura Yasuhisa ID: 9000002347853

    Articles in CiNii:1

    • Influence of Oxygen Dilution on Extremely-Thin Oxide Growth Mechanisms in the Rapid Thermal Oxidation of Monocrystalline Silicon (2000)
  • Omura Yasuhisa ID: 9000002347857

    Articles in CiNii:1

    • First Experimental Observation and Theoretical Verification of Valence-Band Electron Direct-Tunneling Current in SiO2 Films (2000)
  • Omura Yasuhisa ID: 9000002347921

    Articles in CiNii:1

    • Two-Dimensional Quantization Effect on Indirect Tunneling in an Insulated-Gate Lateral pn-Junction Structure with a Thin Silicon Layer (2001)
  • Omura Yasuhisa ID: 9000002347925

    Articles in CiNii:1

    • Quantum Mechanical Influence on Flat-Band Capacitance for Metal-Oxide-Semiconductor Structures with Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation (2001)
  • Omura Yasuhisa ID: 9000002347928

    Articles in CiNii:1

    • Theoretical Consideration for Carrier Transport Noise in Non-equilibrium Steady-State Operation of Metal-Oxide-Semiconductor Field-Effect Transistor (2001)
  • Omura Yasuhisa ID: 9000002347931

    Articles in CiNii:1

    • Characterization of Defects Contributing to Stress-Induced Leakage Current in Nanometer-Thick Oxide Films by Monte-Carlo Simulation (2001)
  • Omura Yasuhisa ID: 9000002718902

    Department of Electric Engineering (1998 from CiNii)

    Articles in CiNii:1

    • Investigation of Hot-Carrier-Induced, Abnormal gm Degradation in Sub-0.1-μm-Channel nMOSFETs/SIMOX with LDD Structure (1998)
  • Omura Yasuhisa ID: 9000002733799

    Dept.of Electronics, Kansai Univ. (2002 from CiNii)

    Articles in CiNii:1

    • Sub-100-nm Partial-Ground-Plane(PGP) Silicon-on-Insulator (SOI) MOSFET Structure for Radio-Frequency and Digital Applications (2002)
  • Omura Yasuhisa ID: 9000002733803

    Faculty Engineering (2002 from CiNii)

    Articles in CiNii:1

    • Impact of transport noise enhancement in scaled-down MOSFET (2002)
  • Omura Yasuhisa ID: 9000002733806

    Articles in CiNii:1

    • Intrinsic spects of hard breakdown in a 2.2-nm-thick SiO_2 film (2002)
  • Omura Yasuhisa ID: 9000002733809

    High-Technology Research Center (2002 from CiNii)

    Articles in CiNii:1

    • Significant initial stress under cyclic application of constant-current stress to thin SiO_2 films (2002)
  • Omura Yasuhisa ID: 9000002733812

    Faculty Engineering, Kansai University (2002 from CiNii)

    Articles in CiNii:1

    • Noise characteristics and modeling of silicon-on-insulator insulated-gate pn-junction devices (2002)
  • Omura Yasuhisa ID: 9000002733814

    Faculty Engineering, Kansai University (2002 from CiNii)

    Articles in CiNii:1

    • Reconsideration of Off-Leakage Current Estimation of Sub -100-nm SOI MOSFETs and Device Selection for Applications (2002)
  • Omura Yasuhisa ID: 9000004871828

    NTT LSI Laboratories (1993 from CiNii)

    Articles in CiNii:1

    • Dependence of CMOS/SIMOX Inverter Delay Time on Gate Overlap Capacitance (1993)
  • Omura Yasuhisa ID: 9000004966841

    NTT LSI Laboratories (1993 from CiNii)

    Articles in CiNii:3

    • 100mA級大電流酸素イオン注入装置の開発 (イオン注入による素子分離技術--SIMOX技術<特集>) (1989)
    • 極薄膜CMOS/SIMOX技術 (イオン注入による素子分離技術--SIMOX技術<特集>) (1989)
    • THEORETICAL ANALYSIS ON HOT CARRIER GENERATION IN MOSFETs (1993)
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