Search Results61-80 of  128

  • Omura Yasuhisa ID: 9000006297984

    High-Technology Research Center, Kansai University (2008 from CiNii)

    Articles in CiNii:2

    • Semi-classical consideration of velocity overshoot effect on transport noise in short-channel MOSFETs (2006)
    • Theory of carrier-density-fluctuation-induced transport noise in metal-oxide-semiconductor field-effect transistors (2008)
  • Omura Yasuhisa ID: 9000006626828

    Graduate School of Eng, Kansai University (2007 from CiNii)

    Articles in CiNii:2

    • Impacts of Geometrical Aspect Ratio on Drivability and Short-Channel-Effects of Multi-Gate SOI MOSFET's (2007)
    • Performance Evaluation of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips (2007)
  • Omura Yasuhisa ID: 9000014595159

    Senior Member, IEEE (2008 from CiNii)

    Articles in CiNii:1

    • Engineering S/D Diffusion for Sub-100-nm Channel SOI MOSFETs (2008)
  • Omura Yasuhisa ID: 9000014595166

    High-Technology Research Center and Faculty of Engineering, Kansai University (2008 from CiNii)

    Articles in CiNii:1

    • Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective (2008)
  • Omura Yasuhisa ID: 9000014595169

    Senior Member, IEEE (2008 from CiNii)

    Articles in CiNii:1

    • Design Guideline for Minimum Channel Length in Silicon-on-Insulator (SOI) MOSFET (2008)
  • Omura Yasuhisa ID: 9000014595171

    High-Technology Research Center and Faculty of Engineering, Kansai University (2008 from CiNii)

    Articles in CiNii:1

    • Effect of Silicon Addtion on the Electrical Properties of SrBi2Ta2O9 Thin Films (2008)
  • Omura Yasuhisa ID: 9000014595214

    High-Technology Research Center and Faculty of Engineering, Kansai University (2008 from CiNii)

    Articles in CiNii:1

    • Effect of Silicon Addtion on Electrical Properties of SrBi2Ta2O9 Thin Films (2008)
  • Omura Yasuhisa ID: 9000014595256

    Senior Member, IEEE (2008 from CiNii)

    Articles in CiNii:2

    • Possible Influence of the Schottky Contacts on the Characteristics of Ultrathin SOI Pseudo-MOS Transistors (2008)
    • Detailed Investigation of Geometrical Factor for Pseudo-MOS Transistor Technique (2008)
  • Omura Yasuhisa ID: 9000014595268

    Electronics Department, Kansai University (2008 from CiNii)

    Articles in CiNii:1

    • Physics-based model of quantum-mechanical wave function penetration into thin dielectric films for evaluating modern MOS capacitors (2008)
  • Omura Yasuhisa ID: 9000024986931

    Articles in CiNii:1

    • Physics-Based Determination of Carrier Effective Mass Assumed in Density Gradient Model (2006)
  • Omura Yasuhisa ID: 9000025061435

    Articles in CiNii:1

    • Experimental study of two-dimensional confinement effects on reverse-biased current characteristics of ultrathin silicon-on-insulator lateral, unidirectional, bipolar-type insulated-gate transistors (2007)
  • Omura Yasuhisa ID: 9000025065687

    Articles in CiNii:1

    • Phonon-limited electron mobility behavior and inherent mobility reduction mechanism of ultrathin silicon-on-insulator layer with (111) surface and ultrathin germanium-on-insulator layer with (001) surface (2007)
  • Omura Yasuhisa ID: 9000025095231

    Articles in CiNii:1

    • Impact of band alignment on line electron density and channel capacitance of rectangular n-channel gate-all-around wire field-effect transistor (2008)
  • Omura Yasuhisa ID: 9000252945454

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1978 from CiNii)

    Articles in CiNii:1

    • Junction-Curvature Effect on Breakdown Voltage of Gate-Controlled Planar Diode (1978)
  • Omura Yasuhisa ID: 9000252949337

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1981 from CiNii)

    Articles in CiNii:1

    • Bulk Doping Effect on Field-Effect Mobility of MOSFETs (1981)
  • Omura Yasuhisa ID: 9000254127620

    Department of Applied Science, Faculty of Engineering, Kyushu University (1975 from CiNii)

    Articles in CiNii:1

    • Theory of Surface Magnetoplasma Wave Near Cyclotron Harmonics in Strong Spatial Dispersion Region (1975)
  • Omura Yasuhisa ID: 9000254128230

    Department of Applied Science, Faculty of Engineering, Kyushu University (1976 from CiNii)

    Articles in CiNii:1

    • Theory of Surface Magnetoplasma Wave in Weak Spatial Dispersion Region (1976)
  • Omura Yasuhisa ID: 9000258125630

    NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Drain Current Characteristics in Sub-10-nm-Thick SOI nMOSFET's on SIMOX(Separation by IMplanted OXygen) Substrates. (1995)
  • Omura Yasuhisa ID: 9000258129474

    NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan (1995 from CiNii)

    Articles in CiNii:1

    • A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen. (1995)
  • Omura Yasuhisa ID: 9000258135570

    NTT System Electronics Laboratories, 3–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor by Separation by IMplanted OXygen (nMOSFET/SIMOX). (1997)
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