Search Results1-9 of  9

  • OTOGAWA Naotaka ID: 9000001235729

    Kankyo Semiconductors Co., Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • Boron Doping for p-Type β-FeSi_2 Films by Sputtering Method (2004)
  • OTOGAWA Naotaka ID: 9000107332808

    Japan Science and Technology Corporation (JST) (2004 from CiNii)

    Articles in CiNii:1

    • Formation of β-FeSi_2 Microstructures by Reactive Ion Etching Using SF_6 Gas (2004)
  • OTOGAWA Naotaka ID: 9000107383509

    Kankyo Semiconductors Co., Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Arsenic Doping of n-Type β-FeSi_2 Films by Sputtering Method (2005)
  • Otogawa Naotaka ID: 9000258171928

    Kankyo Semiconductors Co., Ltd., AIST Tsukuba West (2004 from CiNii)

    Articles in CiNii:1

    • Boron Doping for p-Type .BETA.-FeSi2 Films by Sputtering Method (2004)
  • Otogawa Naotaka ID: 9000258175782

    Japan Science and Technology Corporation (JST) (2004 from CiNii)

    Articles in CiNii:1

    • Formation of .BETA.-FeSi2 Microstructures by Reactive Ion Etching Using SF6 Gas (2004)
  • Otogawa Naotaka ID: 9000258184469

    Kankyo Semiconductors Co., Ltd., AIST Tsukuba West (2005 from CiNii)

    Articles in CiNii:1

    • Arsenic Doping of n-Type .BETA.-FeSi2 Films by Sputtering Method (2005)
  • Otogawa Naotaka ID: 9000401728474

    Articles in CiNii:1

    • Formation of β-FeSi2Microstructures by Reactive Ion Etching Using SF6Gas (2004)
  • Otogawa Naotaka ID: 9000401733497

    Articles in CiNii:1

    • Boron Doping forp-Type β-FeSi2Films by Sputtering Method (2004)
  • Otogawa Naotaka ID: 9000401744032

    Articles in CiNii:1

    • Arsenic Doping ofn-Type β-FeSi2Films by Sputtering Method (2005)
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