Search Results1-20 of  39

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  • OTSUBO Mutsuyuki ID: 9000004813559

    Mitsubishi Electric Corporation, Optoelectronic and Microwave Devices Laboratory (1997 from CiNii)

    Articles in CiNii:6

    • Mechanism for Desorption of SiF_4 from SiO_2 Film Surface in HF Solutions (1996)
    • A Multi Phase-States MMIC Phase Shifter (1996)
    • Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions) (1993)
  • OTSUBO Mutsuyuki ID: 9000004873702

    Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End (1996)
  • Otsubo Mutsuyuki ID: 9000002393584

    Articles in CiNii:2

    • A Study on AuZn Ohmic Contacts to p-Type Indium Phosphide (2003)
    • Chemical Etching Rate,Schottky Barrier Height,and Specific Contact Resistance Dependence on Crystal Face in n-Type 6H-SiC (2004)
  • Otsubo Mutsuyuki ID: 9000252755955

    Central Research Laboratory, Mitsubishi Electric Corporation (1975 from CiNii)

    Articles in CiNii:1

    • Liquid Phase Epitaxial Growth of GaAs Crystals under a Mixed Gas Atmosphere (1975)
  • Otsubo Mutsuyuki ID: 9000252756273

    Articles in CiNii:1

    • The Ga–In–Sb Ternary Phase Diagram at Low Growth Temperature (1978)
  • Otsubo Mutsuyuki ID: 9000252938297

    Kitaitami works: Mitsubishi Electric Corporation (1971 from CiNii)

    Articles in CiNii:1

    • High Purity GaAs Crystals Grown by Liquid Phase Epitaxy (1971)
  • Otsubo Mutsuyuki ID: 9000252940120

    Central Research Laboratory Mitsubishi Electric Corporation (1973 from CiNii)

    Articles in CiNii:1

    • The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy (1973)
  • Otsubo Mutsuyuki ID: 9000252940468

    Central Research Laboratories, Mitsubishi Electric Corporation (1974 from CiNii)

    Articles in CiNii:1

    • Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy (1974)
  • Otsubo Mutsuyuki ID: 9000252941796

    Central Research Laboratory, Mitsubishi Electric Corporation (1975 from CiNii)

    Articles in CiNii:1

    • Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion) (1975)
  • Otsubo Mutsuyuki ID: 9000252943697

    Central Research Laboratories, Mitsubishi Electric Corporation (1977 from CiNii)

    Articles in CiNii:1

    • Photoluminescence Study of Defects in GaAs Formed by Annealing in an H<SUB>2</SUB> Gas Flow (1977)
  • Otsubo Mutsuyuki ID: 9000252943795

    Central Research Laboratory, Mitsubishi Electric Corporation (1977 from CiNii)

    Articles in CiNii:1

    • Selective Epitaxial Growth of GaAs from the Liquid Phase (1977)
  • Otsubo Mutsuyuki ID: 9000252944680

    Central Research Laboratory, Mitsubishi Electric Corporation (1978 from CiNii)

    Articles in CiNii:1

    • Ga<I><SUB>x</SUB></I>In<SUB>1−<I>x</I></SUB>Sb Crystals Grown by Liquid Phase Epitaxy (1978)
  • Otsubo Mutsuyuki ID: 9000252953713

    LSI Research and Development Laboratory, Mitsubishi Electric Corporation (1983 from CiNii)

    Articles in CiNii:1

    • Radiation Annealing of Si- and S-Implanted GaAs (1983)
  • Otsubo Mutsuyuki ID: 9000252953805

    LSI Research and Development Laboratory Mitsubishi Electric Corporation (1983 from CiNii)

    Articles in CiNii:1

    • Characterization of Deep Levels in Semi-Insulating GaAs Crystals by a Spectroscopic Photoelectrochemical Current (1983)
  • Otsubo Mutsuyuki ID: 9000258136379

    Mitsubishi Electric Corporation, Optoelectronic and Microwave Devices Laboratory, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Mechanism for Desorption of SiF4 from an SiO2 Film Surface in HF Solutions. (1997)
  • Otsubo Mutsuyuki ID: 9000392677880

    Articles in CiNii:1

    • Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy (1974)
  • Otsubo Mutsuyuki ID: 9000392679217

    Articles in CiNii:1

    • Degradation of Gallium Arsenide Crystals by the Cold-Working Treatment (Abrasion) (1975)
  • Otsubo Mutsuyuki ID: 9000392679267

    Articles in CiNii:1

    • Ga<I><SUB>x</SUB></I>In<SUB>1−<I>x</I></SUB>Sb Crystals Grown by Liquid Phase Epitaxy (1978)
  • Otsubo Mutsuyuki ID: 9000392680695

    Articles in CiNii:1

    • Liquid Phase Epitaxial Growth of GaAs Crystals under a Mixed Gas Atmosphere (1975)
  • Otsubo Mutsuyuki ID: 9000392682311

    Articles in CiNii:1

    • High Purity GaAs Crystals Grown by Liquid Phase Epitaxy (1971)
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