Search Results1-7 of  7

  • OZAKI HIROJI ID: 9000254949079

    First Department of Oro-Maxillo-Facial Surgery, Tohoku Dental University (1987 from CiNii)

    Articles in CiNii:1

    • Comparative clinical study of ofloxacin (OFLX) with talampicillin hydrochloride (TAPC) in the treatment of oral infections. (1987)
  • OZAKI HIROJI ID: 9000256170106

    First Department of Oro-Maxillo-Facial Surgery, Tohoku Dental University (1988 from CiNii)

    Articles in CiNii:1

    • CLINICAL STUDY ON A NEW QUINOLONE, NY-198, IN ACUTE ORAL AND MAXILLARY INFECTIONS (1988)
  • OZAKI HIROJI ID: 9000256171079

    First Department of Oro-Maxillo-Facial Surgery, Tohoku Dental University (1988 from CiNii)

    Articles in CiNii:1

    • RU 28965, A NEW MACROLIDE, IN ORAL AND MAXILLARY INFECTIONS (1988)
  • OZAKI HIROJI ID: 9000256172954

    First Department of Oro-Maxillo-Facial Surgery, Tohoku Dental University (1988 from CiNii)

    Articles in CiNii:1

    • CLINICAL EVALUATION ON NEW QUINOLONE T-3262 IN ACUTE ORAL AND MAXILLARY INFECTIONS (1988)
  • OZAKI Hiroji ID: 9000001088678

    First Department of Oro-Maxillo-Facial Surgery, School of Dentistry Ohu University (1997 from CiNii)

    Articles in CiNii:1

    • A case of peripheral odontogenic fibroma arising in the premolar region of the mandible (1997)
  • OZAKI Hiroji ID: 9000004964675

    Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete) (2004 from CiNii)

    Articles in CiNii:3

    • 65nm-node CMOS Process with Ultra-Shallow Junction for Low-Operation-Power Applications (Invited) (2004)
    • 65nm-node CMOS Process for Low Power Devices : LOP Specific Ultra-Shallow Junction Technology, and LSTP Specific HfSiON Transistor Technology (2004)
    • 65nm-node CMOS Process for Low Power Devices : LOP Specific Ultra-Shallow Junction Technology, and LSTP Specific HfSiON Transistor Technology (2004)
  • OZAKI Hiroji ID: 9000107388891

    Semiconductor Leading Edge Technologies Inc. (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile (2004)
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