Search Results1-6 of  6

  • OCHI Shikayuki ID: 9000005730947

    Central Research Laboratory, Hitachi Ltd. (1976 from CiNii)

    Articles in CiNii:1

    • A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure : A-5: FIELD EFFECT TRANSISTORS (II) (1976)
  • OCHI Shikayuki ID: 9000005730962

    Central Reserach Laboratory, Hitachi Ltd. (1976 from CiNii)

    Articles in CiNii:1

    • Short Channel, Low Noise UHF MOS-FET's Utilizing Molybdenum-Gate Masked Ion-Implantation : A-6: MOS FIELD EFFECT TRANSISTORS (1976)
  • Ochi Shikayuki ID: 9000004667870

    Hitachi Consumer Products Research Center,Central Research Laboratory (1977 from CiNii)

    Articles in CiNii:1

    • Power MOS・FET (1977)
  • Ochi Shikayuki ID: 9000391541877

    Hitachi Ltd. (1990 from CiNii)

    Articles in CiNii:1

    • 1/<i>f</i> Noise Characteristics of Bipolar Transistors and Reduction of 1/<i>f</i> Noise by Clean Fabrication Process (1990)
  • Ochi Shikayuki ID: 9000402053135

    Articles in CiNii:1

    • A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure (1976)
  • Ochi Shikayuki ID: 9000402053154

    Articles in CiNii:1

    • Short Channel, Low Noise UHF MOS-FET's Utilizing Molybdenum-Gate Masked Ion-Implantation (1976)
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